ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Pb(Zr, Ti)O3 thin films were successfully prepared on (111)Pt/IrO2/SiO2/(100)Si substratesusing SrTiO3 seeds at 290 oC by RF inductive heating type and 350 oC by resistive heating typemetalorganic chemical vapor deposition method (MOCVD), respectively. The SrTiO3 was chosen asseed layers and prepared by pulsed laser deposition method. The crystal structures and orientations ofSrTiO3 seeds were changed by deposition temperature. In the case of preparation with RF inductiveheating MOCVD, the remanent polarization (2Pr) and coercive field (2Ec) were 42 μC/cm2 and 256kV/cm, respectively
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.153.pdf
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