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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1607-1610 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spatial distribution of charges in ultrathin polyimide (PI) Langmuir–Blodgett (LB) films, with a monolayer thickness of 0.4 nm, deposited onto metals was determined by measuring the surface potential of the PI LB films as a function of the number of deposited layers. The depth of penetration of the excess charges displaced from metal electrodes into the PI LB films was about 3 nm. The saturated surface potential was an accurately linear function of the work function of the metal. We concluded that excess charges (mainly electrons) were transferred from metals into as-deposited PI LB films until thermodynamic equilibrium was established at the metal/PI interface by electron tunneling.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7239-7243 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The capacitance–voltage (C–V) characteristics of ultrathin polyimide (PI) Langmuir–Blodgett (LB) films were examined with taking into account the interfacial electrostatic phenomena and the presence of the interfacial electric states at the metal/PI LB film interface. It was revealed that the apparent film thickness of metal/PI LB film/metal elements decreases due to the charge exchange at the metal/film interface. It was also shown that the current–voltage (I–V) characteristics of Au/PI LB film/Al elements were ruled by the electric field of an order of 108–109 V/m built at the metal/film interface due to the excess charges transferred from metals into PI LB films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2714-2716 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface potentials of heat-treated polyimide Langmuir-Blodgett (PI LB) films deposited on Au, Cr and Al electrodes were measured in a dark vacuum vessel at room temperature as a function of the number of deposited layers. The potential depended on the thickness of PI LB films and the work function of base electrode. The spatial charge distribution in PI LB films on various electrodes was determined from the relationship between the surface potential and the number of deposited layers. Based on this result, distribution of the density of electronic state in PI LB films was determined. It was experimentally shown that the electrostatic phenomena in PI LB films at the metal/film interface were explained with taking into consideration of surface states which exist within the range of ∼1 nm from the interface and molecular-ion states which exist in the entire range. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 372-376 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface potential of Cu-tetra-tert-butyl-phthalocyanine (CuttbPc) Langmuir-Blodgett (LB) films on metal electrodes were measured in a dark vacuum vessel at various temperatures as a function of the number of deposited layers. It was found that the potential built across CuttbPc LB film is a result of the displacement of electronic charges between metal electrodes and film. The spatial charge distribution in CuttbPc LB films was determined on the order of nanometer scale, and the distribution of the electronic density of states was also determined. Finally, we concluded that electrostatic phenomena occurring at the CuttbPc/metal interface is explained by assuming the presence of both electron donating and accepting states in CuttbPc LB films at the film/metal interface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1790-1797 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface potentials of heat-treated polyimide (PI) Langmuir–Blodgett (LB) films deposited on Au, Cr, and Al electrodes were measured in a dark vacuum vessel at various temperatures as a function of the number of deposited layers. The potential depended on the thickness of PI LB films and the work function of base metal electrode. The spatial charge distribution in PI LB films on various electrodes was determined from the relationship between the surface potential and the number of deposited layers. Based on this result, distribution of the density of electronic state in PI LB films was determined. It was experimentally shown that the electrostatic phenomena in PI LB films at the metal/film interface were explained taking account of surface states which exist within the range of ∼1 nm from the interface and molecular–ion states which exist in the entire range. Further, it was found that distribution of electronic density in states of polyimides was broadened with the increment of temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Weinheim : Wiley-Blackwell
    Chemical Engineering & Technology - CET 12 (1989), S. 245-248 
    ISSN: 0930-7516
    Keywords: Chemistry ; Industrial Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Mass transfer data are presented for absorption of oxygen in a centrifugal film apparatus. The apparatus was designed to exclude the formation of foam by gas dispersion in liquid. Cells and micro-organisms are not subjected to high shear stress. Therefore, this equipment can be applied in fermentation processes. In the present work, experimental data and correlations were obtained on splitting of the liquid film and oxygen absorption into the film through a spiral ridge formed on the conical surface. The performance of the apparatus is found to be equivalent to those of other types of absorbers.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
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