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  • 1
    Digitale Medien
    Digitale Medien
    Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 866-870 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The inversion-layer mobility in future highly doped silicon-on-insulator (SOI) n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) has been examined for various SOI layer thicknesses (tSOI) using self-consistent calculation. Not only phonon scattering but also surface roughness scattering and ionized impurity scattering have been taken into account. It has been found for SOI MOSFETs with a highly doped channel that, whenever tSOI ((approximately-greater-than)2 nm) is reduced under the full-depletion condition, the inversion-layer mobility in SOI MOSFETs becomes higher than that in bulk MOSFETs. The increase in mobility with the reduction of tSOI to about 10 nm is mainly caused by the suppression of surface roughness scattering. Independent of acceptor concentration (NA), the mobility reaches its peak at tSOI of about 3 nm and then decreases drastically with decreasing tSOI. For SOI MOSFETs with NA higher than 5×1017 cm−3, the mobility increases monotonously to the peak with decreasing tSOI under the full-depletion condition due to the large suppression of ionized impurity scattering for the tSOI range between 10 and 5 nm. These results are different from those in the previous works for SOI MOSFETs with low channel impurity concentration. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1378329
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  • 2
    Digitale Medien
    Digitale Medien
    Mode locking of laser diodes by picosecond optical pulse synchronous pumping (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1236-1238 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Short optical pulse generation from an external-cavity laser diode (LD) by optical pulse pumping has been investigated for the first time. An optical pulse train (pulse duration ∼40 ps) generated by a gain-switched LD was injected into a LD with an external cavity (slave LD) which was biased just below the laser threshold. The wavelength of the injected optical pulse was chosen to be slightly shorter than that of the slave LD. When the repetition rate of the optical injection pulse was nearly equal to the round trip time of the external cavity, the slave LD showed stable mode locking with the shorter pulse duration (∼22 ps) than that of the pumping pulse. At both the upper and lower repetition rates, the pulse duration of the slave LD also became shorter than that of the pumping pulse.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.104321
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