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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    European journal of pediatrics 157 (1998), S. 427-431 
    ISSN: 1432-1076
    Keywords: Key words Cystic fibrosis ; Burkholderia cepacia ; Pseudomonas infection ; Pulmonary function
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract We analysed the pulmonary evolution (radiological scores and pulmonary function) of 81 cystic fibrosis (CF) patients colonized by Pseudomonas aeruginosa (PA), by Burkholderia cepacia (BC) or by both these bacteria, compared to a control group. Pulmonary function was compared in the age bracket 6–13 years. Functional vital capacity (FVC) and forced expiratory volume (FEV1) values for PA colonized patients were significantly worse than for the control group but better than for children colonized by both organisms. In this last group, the evolution of radiological scores and pulmonary function showed a greater decline 2 years after the first colonization compared to the other groups. FVC and FEV1 values in patients colonized by BC were not worse than these of patients colonized by PA. Moreover, BC affected older patients with advanced lung disease and often previously colonized with PA. These results suggested that co-colonization by PA and BC could be a more deleterious factor on the pulmonary evolution than the isolated colonization by PA or BC, and that BC could be a severity marker rather than a cause. In addition, after starting the utilization of mouthpieces with filter at single use for spirometry in 1993 (without any other change in preventive measures already taken during hospitalization), incidence of BC decreased from 8.2% to zero, and no new case of BC colonization has been observed over the last 4 years. Conclusion Co-colonization of CF patients by PA and BC is more deleterious for pulmonary evolution than colonization by one of these bacteria alone. Re-inforcement of environmental measures during hospitalization (e.g. use of disposable mouthpieces for spirometry) was sufficient to reduce the transmission of BC.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 945-947 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical characterization of GaN/SiC heterojunctions and p-SiC has been performed to explain the current–voltage (I–V) characteristics in GaN/SiC n-p heterojunction diodes. The I–V characteristics exhibit tunneling-assisted current with low forward "turn-on" voltages around 1.15 V as opposed to the expected drift/diffusion current with a turn on around 2.5 V. Electroluminescence (EL) measurements on these diodes revealed an infrared peak at 1.25 eV and a red peak at 1.75 eV. Photoluminescence (PL) measurements on p-SiC yielded peaks at 1.25 and 1.80 eV. Since the band gap of 6H–SiC is 3.03 eV, we attribute the EL and PL peaks to radiative transitions from the conduction band edge to a defect level and subsequently down to the valence band edge of p-SiC. This defect level is located 1.25 eV above the valence band edge. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 244-245 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the optical properties of GaN grown over SiO2 on SiC substrates by electron cyclotron resonance assisted molecular beam epitaxy. The photoluminescence spectra and refractive index of GaN were compared for GaN/SiO2/SiC and GaN/SiC. Strong band-edge luminescence was observed at 3.40 eV from the GaN on both SiO2/SiC and on SiC. No defect-related yellow luminescence was observed. The refractive index of GaN at 1.96 eV (632.8 nm) was measured at 2.22 and 2.24 for GaN/SiO2/SiC and GaN/SiC, respectively. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1371-1373 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN/SiC heterojunction diodes have been fabricated and characterized. Epitaxial n-type GaN films were grown using metalorganic chemical vapor deposition (MOCVD) and electron cyclotron resonance assisted molecular beam epitaxy (ECR-MBE) on p-type Si-face 6H-SiC wafers. The I–V characteristics have diode ideality factors and saturation currents as low as 1.2 and 10−32 A/cm2, respectively. The built-in potential in the MOCVD- and ECR-MBE-grown n-p heterojunctions was determined from capacitance–voltage measurements at 2.90±0.08 eV and 2.82±0.08 eV, respectively. From the built-in potential the energy band offsets for GaN/SiC heterostructures are determined at ΔEC=0.11±0.10 eV and ΔEV=0.48±0.10 eV. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1600-0501
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: In a randomized controlled clinical trial carried out at the Ignatius teaching hospital in Breda, The Netherlands, I10 edentulous patients with severe mandibular bone loss were treated with implants of the ITI® Dental Implant System using 3 different treatment strategies: a mandibular overdenture supported by either 2 implants with ball attachments, 2 implants with an interconliecting bar, or by 4 interconnected implants. In this study, results of clinical and radiographic parameters were evaluated and compared over a period of 19 months after implant placement. A total of 283 ITP Dental Implants were placed. Six implants (2%) were lost during the osseointegration period. No further implant losses occurred after that, At the 19 month evaluation mean values and standard deviations for bleeding index were 0.51±0.5 (bleeding incidence=70%) and for plaque index they were 0.46±0.5 (plaque incidence=45%). The mean values and standard deviations for probing depth and loss of attachment were 2.7±1.1 mm and 0.26±O.6 mm respectively. The radiographic evaluation showed a mean bone loss of 1.5 mm± 0.26 after 19 months for all the implants. In cases with 4 interconnected implants there was significantly more bone loss around the central 2 implants (2.1±0.31 mm) in comparison with the lateral 2 (1.4±0.25 mm). No significant correlations were found between plaque and bleeding indices and bone loss.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The dicyclohexane derivatives shown in Table 1 were synthesised by catalytic perhydrogenation of diethylstilboestrol (III, V) or of mesohexestrol (IV). Chromic oxidation of these diols yielded the corresponding diketones (I, II). All compounds were purified and characterised as part of a project on ...
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    International Journal for Numerical Methods in Engineering 19 (1983), S. 451-465 
    ISSN: 0029-5981
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mathematics , Technology
    Notes: In this paper we extend predictor-corrector methods, commonly used for the numerical solution of ordinary differential equations (o.d.e.s), to parabolic partial differential equations (p.d.e.s), typically of the form ut = auxx + ƒ(u, ux, x, t).We describe linear multistep methods for p.d.e.s, the nonlinear algebraic equations arising from implicit formulae being solved using a corrector analogous to those used for o.d.e.s. A sufficient condition for convergence of the iteration is then derived and is found, in most cases, to be far less restrictive than that obtained from the usual method of lines approach. Numerical results are presented to investigate the necessity of this condition. They also indicate that we can accelerate convergence by reducing the time increment. This allows us to achieve convergence within a prescribed number of iterations and so to construct PCm methods corresponding to P(EC)m methods for o.d.e.s. Numerical results are also given to test the absolute stability of the Crank-Nicolson corrector for various predictors P, and iterations, m.
    Additional Material: 10 Tab.
    Type of Medium: Electronic Resource
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