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  • 1
    Electronic Resource
    Electronic Resource
    Growth of microcrystalline silicon by remote plasma chemical vapor deposition without hydrogen dilution (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3184-3186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown microcrystalline silicon by a remote plasma chemical vapor deposition technique using silane and helium only, without hydrogen dilution. The optimum growth temperature and rf power are 330 °C and 100 W, respectively. These results indicate that an atomic hydrogen environment on the growing surface is not always necessary to grow microcrystalline (μc-)Si at low temperatures. It is found that the exposure of He plasma on the growing surface of μc-Si etches the Si layer, explaining the growth of μc-Si by using only silane and He and no hydrogen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356143
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of H2 dilution on the growth of low temperature as-deposited poly-Si films using SiF4/SiH4/H2 plasma (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5115-5118 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of H2 dilution on the growth of polycrystalline silicon (poly-Si) using SiF4/SiH4/H2 by a remote plasma chemical vapor deposition. With an increase of H2 dilution ratio the grain size decreases and the polycrystalline fraction increases, probably due to enhancement of the nucleation rate with H2 flow rate. We have deposited polycrystalline silicon films with a crystalline fraction of 89% at a substrate temperature of 330 °C. The peak of the deconvoluted Raman spectrum contributed from the microcrystalline (or amorphous) Si portion in the deposited poly-Si film increases and the full width at half maximum decreases with increasing H2 flow rate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359554
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of the statistical shift on the anomalous conductivities of n-type hydrogenated amorphous silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 673-676 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We calculated the shift of Fermi energy EF with temperature, using a model density of states for hydrogenated amorphous silicon (a-Si:H) similar to that of deep level transient spectroscopy results, by a numerical method. The conductivity σ was calculated from the calculated EF as a function of temperature. It was found that some features of anomalous transport phenomena of n-type a-Si:H such as kinks or the continuous bending of log σ vs 1/T curves and the Meyer–Neldel-type preexponential factors can be explained, at least in part, by the statistical shift alone.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337412
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  • 4
    Electronic Resource
    Electronic Resource
    Polycrystalline silicon produced by Ni–silicide mediated crystallization of amorphous silicon in an electric field (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3099-3101 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystallization of amorphous silicon (a-Si) by Ni–silicide mediated crystallization (SMC) has been studied in an electric field with Ni area density between 3.3×1013 and 5.7×1014 atoms/cm2 on the a-Si. The needlelike crystallites of ∼1000 Å in width and several micron length grow in the 〈111〉 directions with the 〈011〉 normal to the film surface when Ni area density was between 5.1×1013 and 2.9×1014 atoms/cm2. However, dendritic crystallites have been found in the a-Si matrix without complete crystallization of the a-Si when the Ni area density was 3.3×1013 atoms/cm2. The field-effect mobility of the thin-film transistor using the SMC poly-Si was 60–112 cm2/V s when the average Ni bulk density in the poly-Si was around 3.0×1018 atoms/cm3, and it decreases with increasing Ni density. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1286064
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  • 5
    Electronic Resource
    Electronic Resource
    Anomalous substrate and annealing temperature dependencies of heavily boron-doped hydrogenated amorphous silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2092-2095 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The 1% boron-doped hydrogenated amorphous silicon (a-Si:H) has a sharp absorption edge, a low density of gap states, and a large optical gap of 1.82 eV when the substrate temperature is around 90 °C. The photoconductivity of these samples is nearly independent of substrate and annealing temperatures, while the conductivity activation energy decreases with increasing the substrate (or annealing) temperature. The difference between the conduction band edge and the Fermi level decreases up to 250 °C, and then nearly saturates with an increase of the substrate temperature. This result can be applied to fabricate the high open-circuit voltage a-Si:H n-i-p solar cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338016
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of argon dilution of silane on persistent photoconductivity in single-layered hydrogenated amorphous silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 446-448 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of argon dilution of silane on the persistent photoconductivity (PPC) has been studied for single-layered hydrogenated amorphous silicon films prepared by a glow-discharge decomposition. The magnitude of the PPC effect and the columnar-growth morphology increase when the argon-to-silane mixing ratio increases to 10. Above this ratio both the PPC and the columnar pattern decrease. A clear correlation between the magnitude of the PPC and the microstructure has been observed for undoped single-layered films. It is concluded that the PPC effect is not confined to the multilayers and to the compensated films, and that by increasing the microstructure in undoped films through argon dilution the effect can be increased.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338795
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  • 7
    Electronic Resource
    Electronic Resource
    Structural and electrical properties of polycrystalline silicon produced by low-temperature Ni silicide mediated crystallization of the amorphous phase (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 609-611 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous silicon (a-Si) film was crystallized at 500 °C, using a thin Ni layer. The crystallization proceeds by the migration of NiSi2 precipitates through the a-Si network. The crystallization kinetics change with the density of NiSi2 precipitates on the a-Si. The high density of NiSi2 precipitates, formed at a thick Ni layer, leads to vertical migration of the NiSi2 precipitates. With decreasing Ni thickness on a-Si, the spacing between NiSi2 precipitates increases and leads to lateral growth of crystallites. The room temperature conductivity is around 10−5 S/cm, and the activation energy is around 0.49 eV when the average Ni thickness is 24 Å or less. The sheet resistance of the ion-doped, poly-Si film decreases with the average Ni thickness because the crystalline quality improves as the Ni thickness is decreased. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371906
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  • 8
    Electronic Resource
    Electronic Resource
    Thickness dependence of room temperature permittivity of polycrystalline BaTiO3 thin films by radio-frequency magnetron sputtering (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6322-6327 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline BaTiO3 thin films with thickness ranging from 2100 to 20 000 Å were prepared on platinum substrates using off-axis radio-frequency magnetron sputtering. The variation in room temperature permittivity of the films was investigated with respect to thickness using x-ray diffraction and transmission electron microscopy. All films were ferroelectric and their room temperature permittivity, which was significantly higher than previously reported values, showed a strong dependence on film thickness. Higher permittivity was attributed primarily to the presence of ferroelectric domains. The room temperature permittivity of the thin films showed large variations with grain size, as in the case of BaTiO3 ceramics. The increase in permittivity with increasing film thickness was attributed to the decrease in defect concentration with grain growth. The 20 000 Å film showed an abrupt decrease in permittivity and the presence of an intergranular phase having titanium-excess composition; these phenomena are discussed in terms of domain boundary pinning and recrystallization. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364366
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of Cl incorporation on the stability of hydrogenated amorphous silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3786-3788 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogenated amorphous silicon (a-Si:H) films were prepared by remote plasma chemical vapor deposition (RPCVD) using SiH4/SiH2Cl2/He/H2 mixtures. With increasing Cl content in a-Si:H up to about 1019 cm−3, the stablity of photoconductivity under light illumination was improved with keeping the defect density and Urbach energy constant. We deposited hydrogenated amorphous silicon films with hydrogen content of 6 at. %, Cl content of ∼1019 cm−3, and defect density of 3×1015 cm−3, which exhibited very small photoconductivity degradation under light illumination. The optimum Cl concentration in a-Si:H for stable a-Si:H appears to be ∼1019 cm−3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115383
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  • 10
    Electronic Resource
    Electronic Resource
    Growth of microcrystal silicon by remote plasma chemical vapor deposition (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 281-283 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the growth of microcrystal silicon films by remote plasma chemical vapor deposition as growth parameters of substrate temperature and rf power. With increasing substrate temperature, the growth rate increases because of the decrease of the etch rate. The rf power dependence shows that the growth rate decreases with increasing rf power at high power levels. The results indicate that the chemical equilibrium between the deposition and etching of Si on the growing surface gives rise to the growth of microcrystal Si, resulting in the optimum rf power and substrate temperature for the growth of microcrystalline silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104661
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