Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Two-dimensional profiling of shallow junctions in Si metal-oxide-semiconductor structures using scanning tunneling spectroscopy and transmission electron microscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2115-2121 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used cross-sectional scanning tunneling spectroscopy and cross-sectional transmission electron microscopy to perform two-dimensional profiling of shallow pn junctions in Si metal-oxide-semiconductor structures. In the tunneling spectroscopy measurements, clear differences were observed between current-voltage spectra obtained from p-type, n-type, and depleted regions of the metal-oxide-semiconductor structures; current images generated from the tunneling spectra revealed the profiles of the pn junctions with spatial resolution in both the lateral and vertical directions on the order of 10 nm. Calculated tunneling current-voltage spectra were found to be consistent with observed differences in experimental spectra obtained from p-type and n-type regions of the junctions. Junction profiles obtained by scanning tunneling spectroscopy have also been compared to transmission electron microscopy images of chemically delineated junctions and measurements of vertical dopant profiles obtained by secondary ion mass spectrometry. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361069
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Picosecond time-resolved photoluminescence using picosecond excitation correlation spectroscopy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2077-2082 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the temporal decay of photoluminescence (PL) as detected by picosecond excitation correlation spectroscopy (PECS). We analyze the correlation signal that is obtained from two simple models; one where radiative recombination dominates, the other where trapping processes dominate. It is found that radiative recombination alone does not lead to a correlation signal. Parallel trapping type processes are found to be required to see a signal. To illustrate this technique, we examine the temporal decay of the PL signal for In-alloyed, semi-insulating GaAs substrates. We find that the PL signal indicates a carrier lifetime of roughly 100 ps, for excitation densities of 1×1016–5×1017 cm−3. PECS is shown to be an easy technique to measure the ultrafast temporal behavior of PL processes because it requires no ultrafast photon detection. It is particularly well suited to measuring carrier lifetimes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341111
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Space- and time-resolved photoluminescence of In-alloyed GaAs using photoluminescence excitation correlation spectroscopy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 838-844 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence excitation correlation spectroscopy is used to space and time resolve photoluminescence (PL) intensity variations in the region of isolated dislocations in as-grown In-alloyed GaAs. Spatially resolved PL maps show an annulus of high intensity with an inner and outer dark background surrounding a dislocation. Typical inner and outer diameters of the annuli are about 200 and 400 μm, respectively, which is smaller than the average dislocation separation in In-alloyed GaAs. Temporal resolution of the PL measures the carrier lifetime in the bright and dark regions. These measurements show that the lifetime variation accounts for the PL intensity variation. The variation of the lifetime with temperature indicates that the defects governing the lifetimes in the bright and dark regions are different. Moreover, both defects are deep and neither defect is EL2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343506
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Characterization of electron beam induced modification of thermally grown SiO2 (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1538-1540 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We used local probe techniques to characterize electron beam (e-beam) induced changes in thin oxides on silicon. Primary effects of the 1 nm wide, 300 keV e beam included the formation of positive charges trapped in the SiO2, physical restructuring in the oxide, and deposition of carbonaceous compounds. Charges remained stable in thicker oxides (460 nm) and appeared as changes in the contact potential or microwave response with widths down to 100 nm. In thinner oxides (20 nm) the amount of charge was smaller and less stable; below 7 nm no charge was detected. Physical changes in the oxide, evident as a swelling of irradiated areas, accounted for the etching selectivity of these regions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114485
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Carrier lifetimes in ion-damaged GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2424-2426 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence excitation correlation spectroscopy has been used to measure the dependence of carrier lifetime on the H+ ion implantation dose in GaAs. For doses greater than 1×1012 cm−2 the carrier lifetime is inversely proportional to the ion dose. The minimum lifetime measured was 0.6±0.2 ps for a dose of 1×1014 cm−2. Most important, there is no sign of saturation of carrier lifetime with ion dose down to this lifetime, thus still shorter lifetimes should be achievable with increased ion dose.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101096
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Electron tunneling time measured by photoluminescence excitation correlation spectroscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 552-554 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tunneling time for electrons to escape from the lowest quasibound state in the quantum wells of GaAs/AlAs/GaAs/AlAs/GaAs double-barrier heterostructures with barriers between 16 and 62 A(ring) has been measured at 80 K using photoluminescence excitation correlation spectroscopy. The decay time for samples with barrier thicknesses from 16 A(ring) (≈12 ps) to 34 A(ring)(≈800 ps) depends exponentially on barrier thickness, in good agreement with calculations of electron tunneling time derived from the energy width of the resonance. Electron and heavy hole carrier densities are observed to decay at the same rate, indicating a coupling between the two decay processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100928
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Observation of excitonic transitions in InSb quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1101-1103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of interband exciton transitions in InSb/AlxIn1−xSb multi-quantum-well samples. The exciton peaks are identified with the use of a simple quantum well model. The strain present in the InSb wells alters the spectrum significantly from that for unstrained III–V materials and makes it possible to use the exciton spectrum in determining the band offset. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122097
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Mobility anisotropy in InSb/AlxIn1−xSb single quantum wells (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2138-2140 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three types of defects at the surface of InSb quantum well samples are identified: hillocks, square mounds, and oriented abrupt steps. The electron mobility in the quantum well correlates to the density of abrupt features, such that samples with a high density of anisotropic defects show anisotropy in the mobility. We propose that the dominant scattering mechanism associated with these abrupt features is a fluctuation in the quantum well morphology. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1463206
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Semiconductor characterization with the scanning surface harmonic microscope (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2045-2047 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The scanning surface harmonic microscope, in which a microwave signal is applied across a tip-sample tunneling gap and higher harmonics are detected, is sensitive to the capacitance/voltage characteristics of semiconductor samples on a nanometer scale. We demonstrate its sensitivity to a wide range of dopant concentrations on Si, and its applications as a dopant profiler. Depletion regions are delineated with remarkable sensitivity, and variations in dopant concentration over a 35-nm scale are discussed. Indications of a 5 nm resolution have been obtained. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112788
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Dopant and carrier profiling in modulation-doped GaAs multilayers with cross-sectional scanning tunneling microscopy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3636-3638 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the direct measurement of dopant and carrier density profiles in GaAs (001) modulation-doped structures using cross-sectional scanning tunneling microscopy. On ultrahigh-vacuum-cleaved cross-sectional (110) GaAs surfaces, individual electrically active dopants are observed as hillocks in the top several surface layers, and the tip-sample separation is found to be sensitive to the carrier concentration. In structures where the conventionally measured p-type dopant concentration varied from 1×1018 to 1×1019 cm−3 the density of such dopant hillocks varies accordingly and the tip-sample separation changes by 0.1 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110073
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...