Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 2138-2140
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Three types of defects at the surface of InSb quantum well samples are identified: hillocks, square mounds, and oriented abrupt steps. The electron mobility in the quantum well correlates to the density of abrupt features, such that samples with a high density of anisotropic defects show anisotropy in the mobility. We propose that the dominant scattering mechanism associated with these abrupt features is a fluctuation in the quantum well morphology. © 2002 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.1463206
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