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The structure and crystallization characteristics of phase change optical disk material Ge1Sb2Te4 (1995)

Mao, Z. L. ; Chen, H. ; Jung, Ai-lien

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 2338-2342

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The crystallization characteristics of amorphous Ge1Sb2Te4 thin films were studied by means of time-resolved transition measurements. It was found that a metastable phase appeared at the first stage of the crystallization process and then the metastable phase was transformed into a stable crystalline phase at higher annealing temperatures. The x-ray diffraction and transmission electron microscopy results indicated the metastable phase was identified as a face-centered-cubic structure and the stable crystalline phase corresponded to a hexagonal structure. Our experimental results show that the Ge1Sb2Te4 materials are applicable for phase change erasable optical storage. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360152

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