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  • 1
    Electronic Resource
    Electronic Resource
    Electrical characteristics of heteroprocessed Pb(Zr0.52Ti0.48)O3 films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9245-9249 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sol-gel derived 10% Pb excess Pb(Zr0.52Ti0.48)O3 (PZT) layers placed at the top and bottom of rf-sputtered PZT films are very effective in decreasing the microcracks occurring on the surface of rf-sputtered PZT films during postannealing at 600, 650, and 700 °C. The deposition of PZT films is conducted on Pt/Ti/SiO2/Si(100) substrates at room temperature. The surface microstructure and crystallographic structure of buffered PZT films are investigated through scanning electron microscopy and x-ray-diffraction analysis. In addition, electrical measurements are also examined through hysteresis, dielectric constant and loss, J–V, and fatigue measurements. The P–E hysteresis measurements show an increase in the remanent polarization (12.1, 22.45, 34.64 μC/cm2) and a decrease in the coercive fields (108, 72.9, 68.3 kV/cm) with the increase of postannealing temperature. Dielectric constant and tan δ are varied from 523 to 1330 and 0.0274 to 0.0738 with the increase of annealing temperature. By applying 1 MHz rectangular pulse up to 5×1010 cycles for fatigue test, the 33% reduction of polarization is also observed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362599
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of additives on magnetic properties of sheet Sr-Ba ferrite magnets : The 6th joint magnetism and magnetic materials (MMM)−intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6877-6879 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sr0.75Ba0.25Fe12O19 hexagonal ferrite has attracted much attention due to its large (BH)MAX values and workability. We have prepared sheet magnets by the Dr. Blade method. To examine the effects of additives, such as SiO2, TiO2, Al2O3, and Cr2O3, on magnetic properties of sheet magnets, we used VSM magnetometer, x-ray diffraction, and Mössbauer spectrometer. The crystal structure is found to be a magnetoplumbite of typical M-type hexagonal ferrite, but the α-Fe2O3 phase develops with increasing additives concentration. Using our refined computer program, we have analyzed the Mössbauer spectra in the temperature range from 13 to 800 K. The Mössbauer spectra indicate that the line intensity for the 12k site is reduced with increasing SiO2 concentration, which is different from the reports of Fe-substituted Ba ferrite. This suggests that the developing α-Fe2O3 phase is related to 12k sites. The isomer shifts show the charge states of Fe ions is ferric. When the additives concentrations increase, the Curie temperatures, Tc go down. One sextet for α-Fe2O3 phase still persists above Tc, so it suggests that the high-Tc values do not result from α-Fe2O3. While Al2O3 and Cr2O3 additives increase coercive force Hc, the other additives reduce it.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358099
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  • 3
    Electronic Resource
    Electronic Resource
    The grain size effects on the photoluminescence of ZnO/α-Al2O3 grown by radio-frequency magnetron sputtering (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3573-3575 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnO thin films were epitaxially grown on α-Al2O3 (0001) substrate by radio-frequency (rf) magnetron sputtering. Among the ZnO films deposited at 550 °C, the film deposited at 80 W has the narrowest full width half maximum (FWHM) of x-ray diffraction (XRD) θ-rocking curve, 0.16°, indicating a highly c-axis oriented columnar structure. The FWHM of XRD θ-rocking curve of the ZnO film deposited at 120 W and 600 °C was 0.13° with a minimum channeling yield, 4%–5%. In photoluminescence (PL) measurement, only the sharp near band edge emission was observed at room temperature (RT). The FWHM of PL peak was decreased from 133 to 89 meV as rf power increased from 80 to 120 W at 550 °C, and that of film deposited at 120 W and 600 °C showed 76 meV which is lower value than any other ever reported. These PL results were somewhat opposite to that of XRD. From transmission electron microscopy analysis, grain size and defects were found to affect the PL properties. In this study, the PL property of undoped ZnO thin films is discussed in terms of the crystalline structure and the size of grain. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372383
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  • 4
    Electronic Resource
    Electronic Resource
    N2O reactive gas effect on rf magnetron sputtered Pb(Zr0.52Ti0.48)O3 thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 7024-7028 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In depositing Pb(Zr0.52Ti0.48)O3 thin films by using rf magnetron sputtering process, N2O gas was used instead of oxygen as a reactive gas. In order to investigate an effect of this N2O gas on the electrical and structural properties of the thin films, a various range of thicknesses from 1000 to 4000 Å was deposited on the Pt/Ti/Si(100) substrate at a substrate temperature of 520 °C, and then annealed in the range of 500–700 °C for enhancement of the crystallinity. The ratio of Ar and O2(N2O) gas was 9:1. There were no apparent differences in crystallographic orientation between N2O and oxygen as reactive gases. However, the denser films were fabricated by using N2O gas, and the electrical properties, i.e., remanent polarization, leakage currents and tan δ values were improved in the thinner films (1000 Å). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371789
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  • 5
    Electronic Resource
    Electronic Resource
    Modeling of electrical conductance variation in substrate during initial growth of ultra thin film (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 850-851 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model of the electrical conductance of a resistive or semiconductive substrate, as a function of the average thickness d of a deposited film in initial growth on the substrate is proposed. The total conductance has two terms: one proportional to d2/3 for three-dimension (3D) growth, and one proportional to d for 2D growth or for increasing number of islands. The model was applied to the conductance of a Sn film deposited on a SiOx substrate showing that the initial growth is dominated by 3D growth. The proposed model may be useful for in situ study of the growth of ultra thin films prior to the onset of tunneling conductance. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119666
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  • 6
    Electronic Resource
    Electronic Resource
    Fracture Toughness, Ionic Conductivity, and Low-Temperature Phase Stability of Tetragonal Zirconia Codoped with Yttria and Niobium Oxide (1998)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Tetragonal zirconia (t-ZrO2) solid solutions were prepared with additions of up to 1.5 mol% of niobium oxide (Nb2O5) into 3-mol%-yttria-stabilized t-ZrO2 (3Y-TZP). The influence of pentavalent cation doping on fracture toughness, ionic conductivity, and the tetragonal-to-monoclinic phase transformation in the temperature range of 120°-210°C was investigated. Fracture toughness and ionic conductivity increased and decreased, respectively, as the Nb2O5 content increased, which indicated that the annihilation of oxygen vacancies in 3Y-TZP was responsible for the instability of the t-ZrO2 lattice. The activation enthalpy related to the conductivity was ~83 kJ/mol, regardless of the dopant content, which was consistent with that for the low-temperature degradation of 3Y-TZP doped with Nb2O5. Degradation under an applied electric field occurred only on the specimen surface that was in contact with the anode, which suggests that depletion of the oxygen vacancies led to the degradation. The identical activation enthalpies and the involvement of the vacancy migration in both processes fortified the belief that the low-temperature degradation of yttria-stabilized t-ZrO2 is attributed to oxygen vacancy diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1998.tb02626.x
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  • 7
    Electronic Resource
    Electronic Resource
    Microwave Characteristics of (Pb,Ca)(Fe,Nb,Sn)O3 Dielectric Materials (1997)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 80 (1997), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The dielectric properties of (Pb1−xCax){(Fe1/2Nb1/2)1–ySny}O3 solid solutions, where 0.4 lessthan equal tox ≤ 0.6, y = 0.05, 0.1, have been investigated at microwave frequencies. The replacement of Fe3+/Nb5+ by Sn4+ at the B–site of the perov-skite structure considerably improves the loss quality factor Q and does not remarkably affect the dielectric constant epsilonr and the temperature coefficient of resonant frequency tauf. The tauf value of nearly 0 ppm/°C can be realized for x= 0.55. New high-quality dielectric ceramics having epsilonr of 85.3-89.9,Qf values of 7510-8600 GHz, and τf of 0-9 ppm/°C were obtained at 1150°C for 3 h sintering in air. The influence of the sintering atmosphere on dielectric properties was also investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1997.tb03215.x
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  • 8
    Electronic Resource
    Electronic Resource
    Piezoelectric Properties of Pb[Zr0.45Ti0.5-xLux(Mn1/3Sb2/3)0.05]O3 Ceramics (1998)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: The piezoelectric properties of Pb[Zr0.45Ti0.5-xLux(Mn1/3-Sb2/3)0.05]O3 ceramics, with 0 lessthan equal to x lessthan equal to 0.03, have been investigated. The partial substitution of Ti4+ with Lu3+ permitted improvement of the electromechanical coupling factor (kp), the dielectric constant (epsilonT33), and the piezoelectric constant (d33), while the dielectric loss (tan delta) increased and the mechanical quality factor (Qm) decreased with an increase of x. A pertinent piezoelectric material for actuator applications was Pb[Zr0.45Ti0.48Lu0.02(Mn1/3Sb2/3)0.05]O3, and the piezoelectric properties were kp = (58.5 ± 0.5)%, epsilonT33 = 32 ± 25, d33 = (373 ± 6) 10-12 C/N, Qm = 714 ± 22, and tan delta = (0.98 ± 0.03)%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1998.tb02646.x
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  • 9
    Electronic Resource
    Electronic Resource
    Microwave Dielectrics in the (La1/2Na1/2)TiO3–Ca(Fe1/2Nb1/2)O3 System (1997)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 80 (1997), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Dielectric properties of the system (1 − x)(La1/2Na1/2)TiO3–xCa(Fe1/2Nb1/2)O3, where 0.4 #x# 0.6, have been investigated at microwave frequencies. The temperature coefficient of resonant frequency (τf), nearly 0 ppm/°C, was realized at x= 0.58. These ceramics had perovskite structure and showed relatively low dielectric losses. A new dielectric material applicable to microwave devices having Q·f of 12000–14000 GHz and a dielectric constant (εr) of 59–60 has been obtained at 1300–1350°C for 5–15 h sintering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1997.tb02986.x
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of the cobalt oxide powder by a hot petroleum drying method (1987)
    Springer
    Journal of materials science 6 (1987), S. 1275-1276 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01794587
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