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  • 1
    Electronic Resource
    Electronic Resource
    Small-angle scattering technique with a simplified angle selection (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1075-1079 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simplified homodyne small-angle scattering technique for plasma fluctuation measurements is described. The local oscillator is produced by a beam splitter which lies just behind the scattering area in the main laser beam. The scattered radiation is reflected from the beam splitter and directed onto the detector. Meanwhile, the transmitted portion of the beam is reflected back to the same beam splitter and superimposed with the scattered light so as to act as a local oscillator. The proposed method has several advantages. No separate local oscillator path is necessary, and the alignment and selection of different scattering angles is easily done by two microprocessor-controlled step motors. With a variable attenuator the local oscillator power is adjustable to any desired value. Heterodyning is possible by adding an acousto-optic modulator which shifts the LO frequency. First results of measurements on microturbulences in a plasma are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140320
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    A chemical state resolved x-ray photoelectron diffraction study: Initial stages in diamondlike carbon film deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2181-2186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural sensitivity of x-ray photoelectron diffraction is greatly enhanced by the acquisition of a full hemispherical diffraction pattern of chemically shifted core levels. Complex systems can be studied resolving the local order per element and per chemical environment. This technique is applied to study the earliest stages of hydrogenated diamondlike carbon film deposition on Si(001). Effects of the sample temperature and ion dose on the structure of deposited layers are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363110
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Vacuum arc discharges preceding high electron field emission from carbon films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 476-478 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field emission measurements on chemical vapor deposition diamond and laser ablated a-C films show an activation step after reaching a certain critical electric field. At this field a vacuum arc of some hundred ns duration initiates. While high current arcing leads to the evaporation of the spot surface melting, amorphization or cracking of the film is encountered for lower currents. In any case, much higher electron emission can be observed after this activation procedure due possibly to tip formation resulting in an electric field enhancement. By using a 1 GΩ resistance the discharge current can be limited nevertheless, an activation is observed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118145
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray photoelectron diffraction of (100)-oriented chemical vapor deposited diamond films on silicon (100) (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1533-1534 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (100)-oriented diamond films have been grown on silicon (100) in a microwave plasma assisted chemical vapor deposition (CVD) tubular system. X-ray photoelectron diffraction (XPD) has been used to study such oriented polycrystalline films. Comparing the diffractograms of a natural diamond (100) surface and of polycrystalline (100)-oriented CVD diamond films quite similar features are observed. XPD measurements after 8 min of bias treatment show that the tiny crystals are already preferentially oriented at deposition parameters required for (100)-oriented film growth. Our measurements indicate a strong need to control the growth parameters very carefully during the first minutes of growth to get an orientation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114483
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  • 5
    Electronic Resource
    Electronic Resource
    Field emitted electron energy distribution from nitrogen-containing diamondlike carbon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2253-2255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on energy resolved field emission measurements of 0.3 μm thick nitrogen containing diamondlike carbon (DLC). The film used in this study was deposited by filtered arc deposition onto a highly p-doped Si(100) wafer. The film showed homogeneous field emission over the entire wafer area with an onset field for 1 nA emission current of 20–25 V/μm. The energy resolved field emission measurements were carried out with an applied electric field of 20–22 V/μm. The field emitted electrons originate from the Fermi energy, indicating that no field penetration occurs. The energy distribution has a FWHM of 0.63 eV at an applied field of 21 V/μm. The spectra could be deconvoluted using standard tunneling theory. The results of the deconvolution indicate an electric field strength of 6500 V/μm at the emission site. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120042
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