ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract During observation of porous silicon by transmission electron microscopy a thin contamination layer was formed. This process was ten times faster for porous silicon than for the crystalline material. The aim of this work was to identify the material of the contamination layer and to explain mechanism(s) of rapid changes in spot patterns during electron beam exposure. The material of the layer was identified β-SiC. The mechanism of formation of the β-SiC layer is discussed in detail.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00921252
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