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Diamond deposition from CF4-H2 mixed gas by microwave plasma (1992)

Kadono, M. ; Inoue, T. ; Miyanaga, A. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 61 (1992), S. 772-773

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have deposited diamond films from CF4-H2 mixed gas by microwave plasma chemical vapor deposition method. The diamond films were characterized by scanning electron microscopy, x-ray diffraction, Raman spectrometry, and secondary ion mass spectrometry. (111) peak line of diamond crystal observed by x-ray diffraction and the peaks at 1333 cm−1 in the Raman spectroscopies of the deposited films showed that the films consisted of diamond. We observed that the quality of diamond films got better as the concentration (from 2.5% to 40%) of CF4 (tetrafluoromethane) got lower. It was observed from the optical emission spectra that CF, CF2, CF3, CH, and C2 fragments existed in the microwave plasma of CF4-H2 mixed gas. But it was observed from secondary ion mass spectroscopies that impurities (Si, F, and H) were present in the diamond films.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.107794

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