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  • 1
    Electronic Resource
    Electronic Resource
    The effect of ethanol on lateral and rotational mobility of plasma membrane vesicles isolated from cultured mar 18.5 hybridoma cells (1994)
    Springer
    The journal of membrane biology 138 (1994), S. 221-227 
    Details
    ISSN: 1432-1424
    Keywords: Ethanol ; Hybridoma cell plasma membrane vesicles ; Transbilayer fluidity asymmetry ; Fluorescent probe technique
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Abstract Intramolecular excimer formation of 1,3-di(1-pyrenyl)propane (Py-3-Py) and fluorescence polarization of 1,6-diphenyl-1,3,5-hexatriene (DPH) were used to evaluate the effect of ethanol on the rate and range of the lateral mobility and the range of the rotational mobility of bulk bilayer structures of the plasma membrane vesicles (ATCC-PMV) isolated from cultured hybridoma cells (ATCC TIB 216). In a concentration-dependent manner, ethanol increased the excimer to monomer fluorescence intensity ratio (I′/I) of Py-3-Py in the ATCC-PMV and decreased the anisotropy (r), limiting anisotropy (r∞) and order parameter (S) of DPH in the ATCC-PMV. This indicates that ethanol increased both the lateral and rotational mobility of the probes in the ATCC-PMV. Selective quenching of DPH by trinitrophenyl groups was utilized to examine the range of transbilayer asymmetric rotational diffusion of the ATCC-PMV. The anisotropy (r), limiting anisotropy (r ∞) and order parameter (S) of DPH in the inner monolayer were 0.024, 0.032, and 0.069, respectively, greater than calculated for the outer monolayer of the ATCC-PMV. Selective quenching of DPH by trinitrophenyl groups was also used to examine the transbilayer asymmetric effects of ethanol on the range of the rotational mobility of the ATCC-PMV. Ethanol had a greater increasing effect on the range of the rotational mobility of the outer monolayer as compared to the inner monolayer of the ATCC-PMV. It has been proven that ethanol exhibits a selective rather than nonselective fluidizing effect within the transbilayer domains of the ATCC-PMV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00232794
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  • 2
    Electronic Resource
    Electronic Resource
    High resolution photoemission study of YbAl"3 at low temperature
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 186-188 (1993), S. 70-73 
    Details
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4526(93)90497-T
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  • 3
    Electronic Resource
    Electronic Resource
    Fermi level tuning and the Kondo resonance in Y"1"-"xU"xPd"3
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 186-188 (1993), S. 307-311 
    Details
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4526(93)90562-K
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  • 4
    Electronic Resource
    Electronic Resource
    The effects of gas ambients on the formation of surface and bulk defects in silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6673-6678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of gas ambients on the density of oxide precipitates and stacking faults have been studied in samples annealed in various gas ambients. It is found that the densities of oxide precipitates and bulk and surface stacking faults in oxynitrided samples are higher than those of samples annealed in oxygen, nitrogen, trichloroethane plus oxygen, and pure ammonia. Also, stacking faults have been observed at the surface of the samples annealed in an ammonia ambient. These observations are contrary to our expectations, and several models are proposed to explain the phenomena.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342022
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  • 5
    Electronic Resource
    Electronic Resource
    X-ray photoemission studies of W 4f core levels of electrochromic HxWO3 films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9343-9348 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using x-ray photoelectron spectroscopy (XPS), W 4f core level spectra of electrochromic HxWO3 films have been investigated as a function of the injected charge. W 4f peaks become broader with increasing injected charge. The line shape analysis of W 4f XPS spectra of amorphous HxWO3 films reveals that each spin-orbit split component consists of two peaks. It is also found that, as the injected charge increases, the intensity of the low binding energy (BE) peaks, the asymmetry factor of core lines, and the intrinsic lifetime width increase systematically. Composite structures of W 4f peaks have been attributed to the existence of the different final states, screened by different numbers of W 5d electrons. The low BE peaks are considered to correspond to the locally screened final states, with one more W 5d electrons than in the ground state, which arise from midgap state conduction electrons near EF. There is also a possibility that a mixture of fine scale phases contributes to composite structures and broader linewidths in HxWO3. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362611
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  • 6
    Electronic Resource
    Electronic Resource
    Gettering in silicon (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2974-2985 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of gettering experiments have been carried out for a better understanding of gettering mechanism(s) in silicon. We find that oxidation and oxynitridation, which are known to inject silicon interstitials, do not getter metallic impurities such as Au, Cu, Fe, and Ni while phosphorus (P) diffusion does produce effective gettering of these metals. We also find from P diffusion, Ar ion implantation, and Ni film gettering performed as a function of temperature, there exists an optimum gettering temperature. From a comprehensive discussion of the existing models, we conclude that neither the enhanced metal solubility nor the silicon interstitial model explains our experimental results. Furthermore, it is shown that generation of dislocations is not a prerequisite for effective gettering. A model, based on the segregation of impurities at high temperatures and on the release/diffusion of metallic impurities at lower temperatures, is proposed to explain all of our results. A general form of the segregation coefficient has been developed using an extended concept of solid solubility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342714
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  • 7
    Electronic Resource
    Electronic Resource
    Dependence of the magnetic properties of Co/Pd multilayered films on the structural parameters estimated accurately by x-ray diffraction (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4986-4988 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, Co/Pd multilayered films with a few atomic layers of Co were prepared by alternating deposition in an ultrahigh-vacuum physical-vapor-deposition system. The structural parameters were estimated accurately making use of only the angular positions of x-ray diffraction peaks. The magnetic properties were found to vary greatly depending on Pd predeposition and Pd-sublayer thicknesses as well as Co-sublayer thickness. The Pd-predeposited films were found to have a remarkably high coercivity of 4723 Oe and a greatly enhanced interfacial magnetic anisotropy of 0.72 mJ/m2, which indicates an excellent potential as a magneto-optical recording medium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352021
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  • 8
    Electronic Resource
    Electronic Resource
    Number of oxygen atoms in a thermal donor in silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 136-141 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The number of oxygen atoms in a thermal donor (TD) can be determined directly from the reduction of the concentration of interstitial oxygen in Czochralski (Cz) silicon after annealing at 450 °C for 75 h, when the effect of high-carbon concentration in Si crystals is considered. It is found that on the average a single TD cluster contains eight oxygen atoms. Some TD-inactive large oxygen clusters are produced if the annealing time is longer than the time for TDs to reach their maximum concentration or if the annealing temperature is higher than 475 °C. We also find that the smallest TD cluster contains five oxygen atoms and the largest TD cluster contains 13 oxygen atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340481
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  • 9
    Electronic Resource
    Electronic Resource
    Low-resistivity transparent In2O3 films prepared by reactive ion plating (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1215-1217 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium oxide films with an electrical resistivity of less than 1.5×10−4 Ω cm and good optical quality were prepared by the reactive ion plating of pure indium in an oxygen atmosphere of ∼10−4 Torr. The deposition rate was in the range of 500–900 A(ring)/min, which is much higher than that of the ordinary evaporation. Hall effect measurement showed that the observed low resistivity is primarily due to the high electron mobility (≥70 cm2/V s) with carrier density up to 7×1020/cm3. These properties were correlated with the atomic concentration data by Auger electron spectroscopy and x-ray photoelectron spectroscopy. It has been found that the films of low resistivity had the atomic ratio of O to In of 1.29–1.31.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110893
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  • 10
    Electronic Resource
    Electronic Resource
    Valence-band densities of state in NiAs
    Amsterdam : Elsevier
    Solid State Communications 62 (1987), S. 591-596 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(87)90196-7
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