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  • 1
    Electronic Resource
    Electronic Resource
    Charge-state effects of deep centres in semiconductors on non-radiative capture of carriers by multiphonon processes (1996)
    Springer
    Applied physics 63 (1996), S. 37-43 
    Details
    ISSN: 1432-0630
    Keywords: 71.55 ; 63.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A set of simplified analytical expressions for carrier capture coefficients, including quantatively the charge-dependent effect, have been obtained for easy physical examination and comparison with experiments. The temperature-related charge-state-dependent factorF(T) thus calculated could be used to present more accurately the nature and magnitude of the charge state of a trap centre. The ranges of values ofF(T) valid for attractive, repulsive and neutral centres are also obtained. In addition, we show that the thermal ionization energy for theB centre in GaAs is a function of temperature. The importance of the data of capture cross-section at low temperatures in determining the charge state and characteristic of a deep centre is also manifested. Both the absolute magnitude and the temperature-dependent behaviour of the calculated capture cross-section are well-supported by the very good fits to the experimental electron cross-sections forA andB centres in GaAs reported by Lang [7] and Wang et al. [22] and for Cu centre in Ge reported by Zhdanova and Kalashnikov [23].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01579744
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Charge-state effects of deep centres in semiconductors on non-radiative capture of carriers by multiphonon processes (1996)
    Springer
    Applied physics 63 (1996), S. 37-43 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 71.55; 63.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  A set of simplified analytical expressions for carrier capture coefficients, including quantatively the charge-dependent effect, have been obtained for easy physical examination and comparison with experiments. The temperature-related charge-state-dependent factor F(T) thus calculated could be used to present more accurately the nature and magnitude of the charge state of a trap centre. The ranges of values of F(T) valid for attractive, repulsive and neutral centres are also obtained. In addition, we show that the thermal ionization energy for the B centre in GaAs is a function of temperature. The importance of the data of capture cross-section at low temperatures in determining the charge state and characteristic of a deep centre is also manifested. Both the absolute magnitude and the temperature-dependent behaviour of the calculated capture cross-section are well-supported by the very good fits to the experimental electron cross-sections for A and B centres in GaAs reported by Lang [7] and Wang et al. [22] and for Cu centre in Ge reported by Zhdanova and Kalashnikov [23].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050350
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Changes in Nuclear Ultrastructure during Callus Development in Tissue Culture of Allium Sativum (1998)
    Springer
    Biologia plantarum 41 (1998), S. 49-55 
    Details
    ISSN: 1573-8264
    Keywords: active phase cells ; dividing cells ; garlic ; nucleolus ; quiescent cells
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract The changes in nuclear ultrastructure during garlic development were investigated. In quiescent cells, the nucleus was oblate and small, full of heterochromatin, and without nucleolus. In the active phase cells, the nucleus moved toward the center of the cell, and was enlarged with many deep fissures, and the heterochromatin in the nucleus turned to be euchromatin. One or more nucleoli were seen in active phase cells. Cell divisions were by means of amitosis. Relatively large nuclei with small distortions were seen in the callus cells. These results suggest that the metabolism of the active cells was higher than that of callus and quiescent cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1001752214563
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
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