Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 589-591
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Heteroepitaxy of high-quality InSb films was performed directly on GaAs surfaces by using molecular beam epitaxy. Despite the 14.6% lattice mismatch, two-dimensionally grown InSb on GaAs(111)A substrates were obtained from the initial stage, but not on (001) substrates. A conductive layer was formed from the early stage of the growth on the (111)A surface, and the mobilities and carrier concentrations of InSb on (111)A substrates suggested a low defect density due to confinement of the dislocations to the interface. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125826
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