Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Stochastic rearrangement rules for self-organizing data structures (1991)
    Springer
    Algorithmica 6 (1991), S. 278-291 
    Details
    ISSN: 1432-0541
    Keywords: Self-organizing data structures ; Move-to-front heuristic
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science , Mathematics
    Notes: Abstract We consider self-organizing data structures when the number of data accesses is unknown. We show that certain general rearrangement rules can be modified to reduce significantly the number of data moves, without affecting the asymptotic cost of a data access. As a special case, explicit formulae are given for the expected cost of a data access and the expected number of data moves for the modified move-to-front rules for linear lists and binary trees. Since a data move usually costs at least as much as a data access, the modified rule eventually leads to a savings in total cost (the sum of data accesses and moves).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01759046
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Lower bounds for maximal and convex layers problems (1989)
    Springer
    Algorithmica 4 (1989), S. 447-459 
    Details
    ISSN: 1432-0541
    Keywords: Time complexity ; Upper bound ; Lower bound
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science , Mathematics
    Notes: Abstract In this paper we derive tight lower bounds for the maximal and convex layers problems in the plane. Our lower bound proofs for the maxima problem and convex hull problem are simpler than those previously known. We also obtain an Ω(nlog n) lower bound for the maximal depth problem, and the convex depth problem, when the points are given in sorted order of their x-coordinates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01553901
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Synthesis of diamond films using sequential chemistry: Enhanced growth rate by atomic oxygen (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6267-6272 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of diamond films by sequentially exposing a heated silicon substrate to fluxes of carbon, atomic hydrogen, and atomic oxygen is reported on. High quality diamond films can be grown sequentially using only the hydrogen and carbon sources. Here the use of an additional source of atomic oxygen is reported on. Film growth for both the possible exposure sequences to the three sources has been attempted. No film is grown if the exposure sequence is carbon-oxygen-hydrogen. When the exposure sequence is carbon-hydrogen-oxygen it is found that the flux of hydrogen necessary for the growth of high quality diamond films is less than that for runs in which no oxygen is present. The growth rate of diamond is also enhanced up to 500% with atomic oxygen. The role of atomic oxygen in modifying the growth surface is discussed to explain the improvement of growth rate and quality of these films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359093
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Sequential deposition of diamond from sputtered carbon and atomic hydrogen (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5167-5171 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of diamond thin films on a scratched silicon crystal surface by a chemical-vapor deposition technique is reported. The substrate was bombarded by sputtered carbon from a graphite target in a helium dc glow discharge, and subsequently exposed to atomic hydrogen generated by a hot tungsten filament. The resulting diamond films were characterized by Raman spectroscopy and scanning electron microscopy. Deposited film quality and growth rate were studied as functions of carbon and atomic hydrogen exposure. An increase in growth rate of diamond was observed with atomic hydrogen exposure. We also observe that only the first monolayer of carbon deposited with each exposure appears to be utilized. These observations suggest that the diamond growth is a surface reaction. Further, calculations based upon the carbon utilization in traditional hot filament reactors indicate that a gas-phase reaction process can account for neither the growth rate nor the saturation behavior observed. Based on this work it is proposed that the growth of diamond films is governed by surface reactions, and that the necessity of gas-phase precursors can be precluded.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354281
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Diamond growth by a new method based upon sequential exposure to atomic carbon and hydrogen (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2502-2504 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report growing high-quality diamond films by alternately exposing a substrate to a source of sputtered carbon atoms and one emitting atomic hydrogen in a new type of chemical vapor deposition reactor. The reactor is described, and two examples of films grown in it are shown. The implications of being able to grow diamond by a sequential process, and from the simple constituents of atomic carbon and hydrogen, are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106947
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Book
    Book
    FST TCS 2000: Foundations of software technology and theoretical computer science : 20th conference, New Delhi, India, December 13 - 15, 2000 ; proceedings; 1974 (2000)
    Berlin ; Heidelberg ; New York ; Barcelona ; Hong Kong ; London :Springer,
    Details
    Title: FST TCS 2000: Foundations of software technology and theoretical computer science : 20th conference, New Delhi, India, December 13 - 15, 2000 ; proceedings; 1974
    Author: FST and TCS 〈20, 2000, New Delhi〉
    Contributer: Kapoor, Sanjiv
    Publisher: Berlin ; Heidelberg ; New York ; Barcelona ; Hong Kong ; London :Springer,
    Year of publication: 2000
    Pages: XIII, 532 S.
    Series Statement: Lecture notes in computer science 1974
    ISBN: 3-540-41413-4
    Type of Medium: Book
    Language: English
    URL: https://zbmath.org/?q=an:0952.00044
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    ZIB Catalog
    Zuse Institute Berlin get availability status
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...