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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 924-926 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk growth of the III–V diluted magnetic semiconductor, Ga1−xFexSb is reported for different iron concentrations. Room-temperature optical absorption coefficient measurements were performed. The dependence of the band gap Eg on the Fe concentration was studied. The band gap decreased with increasing x, and the variation was observed to follow a nonlinear trend. Photoluminescence (PL) measurements at 18 K were also carried out. The PL spectra showed a clear peak shift due to incorporation of Fe in the lattice, thus agreeing with the optical absorption results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2946-2948 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present measurements of ballistic magnetoresistance in nanocontacts grown by electrodeposition of Ni microclusters on magnetic thin films covered by aluminum oxide layers, using a technique proposed by Schad et al. [D. Allen, R. Schad, G. Zangari, I. Zana, D. Yang, M. C. Tondra, and D. Wang, J. Vac. Sci. Technol. A. 18, 1830 (2000); Appl. Phys. Lett. 76, 407 (2000); D. Allen, R. Schad, G. Zangari, I. Zana, D. Yang, M. C. Tondra, D. Wang, and D. Reed, J. Appl. Phys. 89, 6662 (2001)]. The measurements are made on single Ni clusters in contact with a Ni and Co thin film. We measure the magnetoresistance and observe the relaxation of the magnetization and electrical resistance as a function of time. The clusters are electrodeposited under several different experimental conditions. Some are deposited randomly on an unpatterned film and some through various patterned photoresists that control the location at which the cluster is grown. The typical contact size is estimated from the electrical resistance to be 10–30 nm. Ballistic magnetoresistance values up to 14% are obtained in these first experiments. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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