ISSN:
1057-9257
Keywords:
Two-photon absorption
;
Semiconductor crystal
;
Structural defect
;
Impurity
;
Energy band
;
Thermal treatment
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
The influence of grown-in and impurity defects on the form of the fundamental absorption edge in ZnO, ZnSe and CdS crystal was studied by the method of two-photon absorption (TPA). A considerable long-wavelength shift of the TPA spectra was measured in Zinc-rich compounds after thermal treatment. This can be explained by a very good saturation of interstitial Zni atoms up to a concentration of 1018 cm-3 causing deformation of the band edge.
Additional Material:
5 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/amo.860030135
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