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  • 1
    Electronic Resource
    Electronic Resource
    Auger line-shape studies of the bonding in transition metal carbonyls and nitrosyls (1982)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 104 (1982), S. 5951-5959 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00386a020
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  • 2
    Electronic Resource
    Electronic Resource
    Localization effects in the Auger spectra of ring nitrogen systems: Pyridine, poly(2-vinyl)pyridine, borazine, and boron nitride (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 4375-4383 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The N(KVV) Auger spectra of gas phase pyridine (C5H5N) and borazine (B3N3H6), and of solid phase poly(2-vinyl)pyridine (PVP) and hexagonal boron nitride [(BN)x] are reported and analyzed. The data indicate two Auger "fingerprint'' types of nitrogen. Ammonia (NH3) is the prototype for the first, where three of the five valence electrons are σ bonding and the other two are the lone pair. This localized electronic structure gives rise to relatively sharp features in the N(KVV) spectrum. Typical of the second fingerprint type is pyridine, where there are two σ bonding electrons, a lone pair of electrons, and one electron contributing to the delocalized π system. Theoretical nitrogen Auger transition energies and intensities are calculated for pyridine to demonstrate the general origin of the overlapping features in the relatively broad N(KVV) spectrum of this molecule. PVP fits into the second fingerprint type while borazine and boron nitride give nitrogen Auger spectra more like ammonia. Approximate calculations using the equivalent core concept are used to clarify the relationship between the ammonia, borazine, and boron nitride spectra. It is shown that in these systems the initial Auger state (core–hole) largely localizes the bonds and lone pair on the nitrogen. The Auger spectra show that it is the σ, π and nonbonding orbital characters that provide the Auger fingerprint.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.451900
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  • 3
    Electronic Resource
    Electronic Resource
    Dielectric breakdown of ultrathin aluminum oxide films induced by scanning tunneling microscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2228-2230 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dielectric breakdown of 7-Å-thick Al2O3 (111) films grown on Ni3Al(111) under ultrahigh vacuum conditions is induced by increasing the bias voltage on the scanning tunneling microscopy tip under constant current feedback. Breakdown is marked by the precipitous retreat of the tip from the surface, and the formation of an elevated feature in the scanning tunneling microscopy image, typically greater than 5 nm high and ∼100 nm in diameter. Constant height measurements performed at tip/sample distances of 1 nm or less yield no tip/substrate physical interaction, indicating that such features do not result from mass transport. Consistent with this, current/voltage measurements within the affected regions indicate linear behavior, in contrast to a band gap of 1.5 eV observed at unaffected regions of the oxide surface. A threshold electric field value of 11±1 MV cm−1 is required to induce breakdown, in good agreement with extrapolated values from capacitance measurements on thicker oxides. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1313816
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  • 4
    Electronic Resource
    Electronic Resource
    Copper wetting of a tantalum silicate surface: Implications for interconnect technology (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3479-3481 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy data show that sputter-deposited Cu (300 K) displays conformal growth on oxidized TaSi films (TaSiO6). The TaSiO6 films, 6 Å thick, were formed by sputter deposition of Ta onto ultrathin SiO2 substrates at 300 K, followed by annealing to 600 K in 2 Torr O2. The photoelectron spectra of the films are characterized by a Si(2p) binding energy at 102.1 eV, indicative of silicate formation. Annealing the film to 〉900 K resulted in silicate decomposition and SiO2 formation. Cu(I) formation and conformal growth were not observed for the annealed films. The results are similar to those previously reported for oxidized TaSiN, and indicate that Si-modified Ta barriers should maintain Cu wettability under oxidizing conditions for Cu interconnect applications. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418025
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of sulfur upon Fe and Cr oxide thermal stability in 304 stainless steel (1996)
    Springer
    Oxidation of metals 46 (1996), S. 169-184 
    Details
    ISSN: 1573-4889
    Keywords: XPS ; steel ; stability ; oxide ; sulfur
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract X-ray photoelectron spectroscopy measurements show that exposure of an Fe−Cr−Ni alloy to H2S and O2 under ultrahigh vacuum (UHV) conditions leads to the thermal instability of the Fe oxide without affecting the Cr oxide. An atomically clean metal surface, predominantly Fe in composition and free of internal sulfur, was exposed to H2S under controlled conditions in order to form a sulfided monolayer. Adsorbed S inhibited surface oxidation at temperatures between 325 K and 825 K. The presence of adsorbed S did not, however, inhibit the surface segregation of Cr for temperatures 〉600 K, compared to a S-free sample. Upon annealing of a sulfided sample to 900 K in UHV, the Fe oxide largely disappears, while no change is observed in the Cr oxide. The S-free sample shows no significant change in either the Fe or Cr oxides upon annealing. The results presented in this paper show that sulfidation of an alloy surface prior to oxidation and surface segregation can adversely affect the thermal stability of the Fe oxide without affecting the Cr oxide overlayer resulting from surface segregation and preferential oxidation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01046889
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  • 6
    Electronic Resource
    Electronic Resource
    Interactions at the Al-S-Fe Interface: S Inhibition of Aluminum Oxidation (1999)
    Springer
    Oxidation of metals 52 (1999), S. 139-153 
    Details
    ISSN: 1573-4889
    Keywords: SULFUR ; ALUMINUM ; OXIDATION ; INTERFACE
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The deposition of aluminum on S/Fe(111)(1× 1) at 300 K in UHV results in the formation ofa disordered S-modified Al adlayer. Insertion of Albetween the sulfur atoms and the Fe substrate isindicated by an increase of the S Auger signal withincreasing Al deposition. Room-temperature oxidation ofAl/S/Fe(111) in UHV is inhibited compared to theoxidation of aluminum deposited on the sulfur-freeFe(111). The oxygen-uptake curves and variations in theS(LVV), Fe(MVV) intensities with oxygen exposure arealso consistent with the insertion of the aluminum atomsbetween the S overlayer and the Fe substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1026624825215
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  • 7
    Electronic Resource
    Electronic Resource
    S-Induced Destabilization of Aluminum Oxide at the Fe(poly)–S–Al2O3 Interface (2000)
    Springer
    Oxidation of metals 54 (2000), S. 285-300 
    Details
    ISSN: 1573-4889
    Keywords: AES ; Fe(poly) ; sulfur ; aluminum oxide ; reduction ; interface
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Auger measurements reveal that, under UHV conditions, interfacial sulfurinduces the destabilization of an aluminum oxide overlayer at theFe–Al2O3 interface at temperatures above400 K. One monolayer deposition of Al onto Fe/S results in the insertion ofAl at the Fe–S interface. Exposure of Fe–Al–S to oxygenat 300 K gives rise to the complete oxidation of the aluminum adlayer asevidenced by the disappearance of the Al0 Auger signal and thestoichiometric formation of the aluminum oxide. When the resultingFe–S–Al2O3 is annealed progressively tohigher temperatures between 400 and 900 K, analysis of the Auger spectrashows a dramatic decline in the Al/O Auger intensity ratio. This declineis accompanied by the appearance of a small signal due to Al0,which maintains a constant intensity as the total Al signal (due mainly toAl3+) decreases. The appearance of the Al0 Augersignal accompanied by the attenuation of the Al3+ signalsignifies the chemical conversion of Al3+ into Al0,probably followed by diffusion of Al into the bulk. The possibility ofalumina dewetting and island formation, however, cannot be ruled out onthe basis of the present data. In the absence of interfacial sulfur, the alumina–Fe interface is stable to 900 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004602412849
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