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  • 1
    Electronic Resource
    Electronic Resource
    Ion beam sputtering apparatus for fabrication of compositionally modulated materials (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1340-1343 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new apparatus for production of artificial compositionally modulated materials is presented. It consists of an ion gun that sputters from alternating targets on a rotating assembly, the position of which is controlled by a thickness monitoring crystal. The apparatus is simple, relatively inexpensive, and flexible, in that it allows deposition of metals, semiconductors, and insulators under the same conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138511
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  • 2
    Electronic Resource
    Electronic Resource
    Apparatus for in-situ measurements of changes in the electrical resistivity accompanying phase changes in metastable metallic alloys (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 347-350 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new apparatus for making in-situ measurements of changes in the electrical resistivity accompanying phase transformations and structural relaxation of rapidly quenched metallic alloys is presented. Measurements may be made in vacuum or inert gas. In inert gas, the sample temperature is raised to the annealing temperature within 3–4 min with no appreciable overshoot; the long-term thermal stability is better than ±0.2 K. The measurement circuit is stable to better than 5 ppm over 24 h. The apparatus is simple, convenient to use, and flexible for changes in the experimental design.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140202
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  • 3
    Electronic Resource
    Electronic Resource
    Formation and crystallization of Ti–Hf–Ni metallic glasses (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1026-1028 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of a Ti25Hf50Ni25 metallic glass and the phase evolution upon crystallization (devitrification) are reported. The glass is strongly metastable, with a 65 °C separation between the glass transition temperature, Tg=335 °C, and the onset temperature for primary crystallization to a nanoscale microstructure consisting of an icosahedrally symmetric ordered phase, that can not be reported as the icosahedral phase (i-phase). There is no distinction between an i-phase and a high-order crystal rational approximant for such small grains, since the unit cell size of a reasonable high-order approximant is of the order of the grain size. Upon annealing at higher temperatures, the metastable icosahedrally symmetric phase transforms to a stable Ti2Ni-type crystal phase. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1497724
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic properties of the icosahedral phase of Ti transition metal alloys : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5136-5137 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the magnetic properties of the icosahedral phase (i phase) in rapidly quenched Ti-Mn based alloys. Ribbons of i-phase samples of composition Ti61Mn37Si2, Ti61Mn22Cr15Si2, Ti61Mn22Fe15Si2, and Ti61Mn22Co15Si2 were prepared by melt spinning onto a copper disk in an argon atmosphere. Low-field magnetization data reveal a ferromagnetic ordering at Tc (approximately-equal-to) 40 K for Ti61Mn37Si2 samples. A partial substitution of Mn by Cr enhances Tc to 58 K with large thermal hysteresis, whereas samples of composition Ti61Mn22Fe15Si2 show no long-range magnetic ordering down to 4 K. We have found that the sample Ti61Mn22Co15Si2 shows evidence of spin-glass behavior below 15 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348101
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  • 5
    Electronic Resource
    Electronic Resource
    A sensitive resistivity probe of high temperature phase transformations (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 410-414 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new apparatus for making in situ measurements of changes in the electrical resistivity accompanying phase transformations in metallic alloys is presented. Measurements can be made in vacuum or inert gas at annealing temperatures as high as 1500 K. The long-term thermal stability is better than ±0.3 K. The measurement circuit is stable to better than 0.01% over any time scale. This apparatus provides a relatively simple and inexpensive means for obtaining high temperature resistivity measurements on very brittle samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142135
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  • 6
    Electronic Resource
    Electronic Resource
    Coupled-flux nucleation modeling of oxygen precipitation in silicon (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5062-5070 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental data for oxygen precipitation densities in Czochralski-grown silicon following multistep annealing treatments are compared with predictions from a coupled-flux model for time-dependent nucleation. This is a more correct model for diffusion-controlled nucleation processes than is the classical theory of nucleation since it directly couples the two stochastic fluxes of interfacial attachment and long-range diffusion. Quantitative agreement is obtained between the measured and calculated densities for nucleation temperatures greater than 650 °C. Good agreement is obtained for lower temperatures if the oxygen diffusion rate is taken to be larger than is predicted from high-temperature diffusion data. The fit values for the diffusion coefficient from the nucleation data are in good agreement with recent results from dislocation-unlocking experiments. The oxygen loss calculated by coupled-flux nucleation and diffusion-limited growth agrees with the experimental observations. Classical theory nucleation calculations predict a much greater oxygen loss, signaling the failure of the theory to correctly treat nucleation when long-range diffusion is important, true in most solid-state precipitation processes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311309
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  • 7
    Electronic Resource
    Electronic Resource
    Oxygen precipitation in silicon: Experimental studies and theoretical investigations within the classical theory of nucleation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8097-8111 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantitative measurements of the oxygen precipitate rate as a function of annealing were made in Czochralski-grown silicon wafers that contained different initial concentrations of oxygen. All wafers were annealed at 1000 °C for 15 min to ensure that the initial cluster-size distributions were identical in all samples of the same composition prior to the multi-step annealing treatments used for the precipitation studies. The experimental data are compared with numerical predictions for time-dependent nucleation within the classical theory of nucleation. Quantitative agreement is obtained between the measured and calculated densities of oxygen precipitates for nucleation temperatures greater than 600 °C, but only over a narrow range of oxygen composition. Below 600 °C, the measured density for all samples is orders of magnitude larger than is predicted from the model. Further, the measured data show an anomalously small temperature dependence for the induction time for nucleation that does not scale with the diffusion coefficient, as expected from the classical theory of nucleation. Fundamentally, the classical theory of nucleation cannot explain the time-dependent nucleation of oxygen precipitates for temperatures below 650 °C. A possible reason is given. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370648
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  • 8
    Electronic Resource
    Electronic Resource
    Stable Ti-based quasicrystal offers prospect for improved hydrogen storage (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2998-3000 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The desorption of hydrogen from a novel material, a Ti45Zr38Ni17-H quasicrystal, was observed using high-temperature powder x-ray diffraction, demonstrating the potential utility of Ti-based quasicrystals in place of crystalline or amorphous hydrides for hydrogen storage applications. The maximum observed change in hydrogen concentration was from 61 at. %, corresponding to a hydrogen-to-metal ratio (H/M) of 1.54, at 91 °C to less than 2.5 at. % (H/M=0.025) at 620 °C. The onset temperature of desorption is below 350 °C. Surface oxidation was found to promote the formation of crystalline hydride phases. Highly oxidized samples transformed to a mixture of the C14 Laves and C15 Laves crystalline hydrides, and the Ti2Ni phase. When the oxidation was less severe, a reversible transformation between the quasicrystal and crystalline hydride phases was clearly observed, demonstrating the stability of the Ti45Zr38Ni17 quasicrystal at very low hydrogen concentrations, and temperatures as high as 661 °C. This is the first evidence for a stable Ti-based quasicrystal and for reversible hydrogen storage in a quasicrystalline phase. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117756
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  • 9
    Electronic Resource
    Electronic Resource
    A stable Ti-based quasicrystal (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3230-3232 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of the icosahedral phase (i phase) in Ti45Zr38Ni17 alloys is demonstrated. As-cast alloys containing initially only the C14 hexagonal Laves and α-solid-solution phases transformed primarily to the icosahedral phase upon annealing in vacuum for 64 h at 570 °C. This confirms previous evidence for i-phase stability and firmly establishes this quasicrystal as the first nonaluminum stable icosahedral phase. Diffraction data show that this stable i phase is primitive; energy dispersive x-ray spectroscopy measurements place its composition near Ti41.5Zr41.5Ni17. These and other results suggest that the structure of this i phase is similar to that of i(AlLiCu). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119133
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