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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 751-754 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The effect of incorporation of cesium with implantation on the electrical characteristicsof SiO2/4H-SiC interface has been evaluated using MOS capacitors. With a cesium dosage of 1012and 3x1012 cm-2 on deposited oxide re-oxidized in steam, effective oxide charge densities of -1.4x1012 and -7.5x1011 cm-2 respectively were extracted and a cesium implant activation percentageof 33% was estimated from flatband voltage shift. Also, corresponding interfacial state densities of2.5x1013 and 1.8x1013 cm-2-eV-1 near the conduction band edge were extracted from High-Lowfrequency C-V technique, showing a decreasing Dit with increasing Cs dosage
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 527-529 (Oct. 2006), p. 1525-1528 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Both n-type and p-type GaN MOS capacitors with plasma-enhanced CVD-SiO2 as thegate oxide were characterized using both capacitance and conductance techniques. From a n typeMOS capacitor, an interface state density of 3.8×1010/cm2-eV was estimated at 0.19eV near theconduction band and decreases deeper into the bandgap while from a p type MOS capacitor, aninterface state density of 1.4×1011/cm2-eV 0.61eV above the valence band was estimated anddecreases deeper into the bandgap. Unlike the symmetric interface state density distribution in Si,an asymmetric interface state density distribution with lower density near the conduction band andhigher density near the valence band has been determined
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 1263-1268 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: GaN MOS capacitors were characterized to optimize the electric properties of SiO2/GaNinterface. With optimized anneal conditions, an interface state density of 3.8×1010/cm2-eV wasestimated at 0.19 eV near the conduction band and decreases deeper into the band gap.Enhancement-mode GaN MOSFETs were experimentally demonstrated on both p and n GaN epilayerwith record high field-effect mobility of 167 cm2/V-s. Lateral RESURF-type GaN MOSFETs exhibitnon-destructive high voltage (up to 940V) blocking capabilities. Other characterization includingmobility orientation dependence, MOS-gated Hall mobility, current collapse and an NMOS inverterutilizing E/D mode GaN MOSFETs have also been experimentally demonstrated
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Munksgaard International Publishers
    Ecology of freshwater fish 13 (2004), S. 0 
    ISSN: 1600-0633
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract –  Movement and habitat use of river blackfish (Gadopsis marmoratus R.) was studied in a highly modified central Victorian stream (Birch Creek), Australia, using radio telemetry (N = 10) and mark–recapture (N = 113) between October 2001 to May 2002, and November to December 2002 respectively. Blackfish had a small home range of 10–26 m with strong affinity to a pool. However, small movements within a pool were common which resulted in relatively large cumulative movements. At a diel scale there were no significant differences in blackfish movement between day and night (Kruskal–Wallis test, P = 0.95). Six of seven blackfish translocated 40 m upstream or downstream of their original positions returned within 48 h, suggesting strong affinity not only to a pool, but also to a small region within a pool. Blackfish utilised slow flowing (0–20 cm s−1) and deep waters (40–60 cm). Blackfish were strongly associated with the instream cover habitats of undercut banks and boulders. Significant differences were recorded in instream cover and water velocity used by blackfish between day and night (Kruskal–Wallis test, P = 〈0.01). At night blackfish used open areas with high water velocities whereas during the day blackfish used complex undercut banks with low water velocities.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    International journal of food science & technology 26 (1991), S. 0 
    ISSN: 1365-2621
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Notes: The physico-chemical characteristics, and cooking, eating, milling and nutritive qualities of four varities of rice were measured and wide varietal differences were observed.There was little variation in gel consistency and gelatinization temperature, but there were marked differences in water absorption, volume expansion and percentage of leach loss.Eating characteristics of one variety (Ambemohar) were less acceptable than in the other three, and one (MAU-Sel-9) had a much higher protein content than the others.On the whole, the quality of MAU-Sel-9 was found to be superior to the other three varieties of rice.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1364-1366 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spectrum of radiation scattered by plasma has been derived by the use of nonequilibrium hydrodynamic theory of fluctuations. The principal features of ion-acoustic resonances, the Alder–Wainwright velocity autocorrelation function, and initial dispersion in scattering have all been studied in the present analysis.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3062-3063 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theory for the determination of intensity spectrum in plasma interacting with a laser beam is presented. The calculations have been based on hydrodynamical equations including nonlinear terms.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 46-50 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phenomenon of current drive under the action of radio-frequency traveling waves into a tokamak is analytically studied by solving the two-dimensional Fokker-Planck equation first treated by Fisch. The runaway rate, the number of runaway electrons, the electron current density, and power density are obtained analytically and are compared with the results of one-dimensional analytic treatment.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 0301-0104
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Journal of Organometallic Chemistry 168 (1979), S. 183-195 
    ISSN: 0022-328X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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