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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 166-168 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the Pt bottom electrode orientation on the growth of SrBi2Ta2O9 (SBT) films was elucidated in terms of the atomic matching at the SBT/Pt interfaces. A highly c-axis oriented SBT film was grown on the Pt (001) plane since the SBT (00l) plane conjugates well with the Pt (001) plane from a crystallographic point of view. Both the strong (105)tet and (110)tet SBT peaks were found in the x-ray diffraction profile when the SBT film was grown on the Pt (111) surface. It was found that not a single SBT plane can match with the whole Pt (111) plane due to the appreciably different atomic configurations. The cross-sectional transmission electron microscopy image revealed that the SBT/Pt interface was structurally stable after heat treatment at 750 °C. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2690-2692 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal structure and microstructural evolution of Sr–Bi–Ta–O films grown on LaAlO3 substrates were investigated using x-ray diffraction and cross-sectional transmission electron microscopy. It was found that the epitaxial low-temperature phase found in the as-deposited and 650 °C heat-treated films has a fluorite structure (CaF2-type structure) with a face-centered-cubic symmetry. From the electron diffraction patterns for the fluorite phase, {〈fraction SHAPE="CASE"〉12〈fraction SHAPE="CASE"〉12〈fraction SHAPE="CASE"〉12} and {100}-type superlattice spots were observed. The epitaxial fluorite phase was gradually encroached upon by polycrystalline layered perovskite SrBi2Ta2O9 grains during heat treatment at 750 °C. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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