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  • 1
    Electronic Resource
    Electronic Resource
    Pseudomorphic high electron mobility transistor channel sheet charge measured by photoluminescence (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1343-1345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nondestructive room temperature photoluminescence of the InGaAs channel of a pseudomorphic high electron mobility transistor is presented as a function of bias applied to a semitransparent gate. The channel electron sheet concentration is evaluated via line-shape fitting of the photolumin- escence spectrum. Excellent agreement with electrically derived values of the channel charge was found. Information on the symmetry of the channel potential is also provided by the results of the photoluminescence line-shape fit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357800
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  • 2
    Electronic Resource
    Electronic Resource
    Depletion corrections in variable temperature Hall measurements (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4808-4811 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The decrease in the measured Hall free-electron concentration with decreasing temperature near 300 K is often observed for thin high-purity GaAs layers. This has previously been interpreted as electron freezeout on deep donor sites. However, it can be quantitatively described by the decrease in carrier concentration per unit area associated with increasing surface and interface depletion region thicknesses. It is shown that when these depletion regions are included in the analysis of the Hall-effect data, the measured free-electron freezeout behavior can be accurately described by a simple shallow donor. If necessary, a deep donor may be included in the modeling. The results agree with the observed temperature variation of the capacitance-voltage (C-V) profiling data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338343
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of the substrate orientation on Ge incorporation in molecular-beam epitaxial GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 255-259 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of Ge in GaAs layers grown simultaneously on (100), (311)A, and (311)B GaAs substrates by molecular-beam epitaxy has been studied using Hall-effect measurements, photothermal ionization spectroscopy, and photoluminescence. The quantitative analysis shows that Ge is more amphoteric than Si, but the orientation dependence of the amphoteric behavior of Ge is similar to Si. The amphoteric site preference of Ge is more selective for growth on the (311) polar orientation than on the (100) nonpolar orientation. Like Si, Ge incorporates predominantly as a donor in (311)B growth, while it incorporates predominantly as an acceptor in (311)A growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345299
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of the substrate orientation on Si incorporation in molecular-beam epitaxial GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 743-748 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of Si in high-purity lightly Si-doped GaAs grown simultaneously on (100), (311)A, and (311)B GaAs substrates by molecular-beam epitaxy has been studied. Photothermal ionization spectroscopy shows that Si is incorporated predominantly as a donor for growth on (100) and (311)B substrates, whereas low-temperature photoluminescence shows that Si is incorporated predominantly as an acceptor for growth on a (311)A substrate. Spectroscopic and Hall-effect measurements show that the dominance of Si donors in the samples grown on the (100) and (311)B substrates renders these samples n-type while the dominance of Si acceptors in the sample grown on the (311)A substrate renders that sample p-type.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340066
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  • 5
    Electronic Resource
    Electronic Resource
    High mobility two-dimensional hole gas in an Al0.26Ga0.74As/GaAs heterojunction (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1834-1835 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have obtained two-dimensional hole gas with low temperature mobility as high as 3.8×105 cm2 V−1 s−1 at a density of 1×1011 cm−2. The sample was grown on (311)A orientation. We give arguments to show that (100) orientation is not the optimum orientation for the growth of high purity materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337227
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  • 6
    Electronic Resource
    Electronic Resource
    Photo-Hall studies of high-purity GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7425-7433 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-purity GaAs layers which are nearly or fully depleted of carriers at low temperatures, due to surface and interface depletion effects, can be characterized electrically by utilizing the phenomenon of persistent photoconductivity. To facilitate electrical measurements of such layers, at 4.2 K the sample is momentarily illuminated by above band-gap light, which causes a reduction in the surface and interface depletion region. After illumination the effects of the photoinduced charge neutral region persist until at some higher temperature, the charge distribution in the sample relaxes back to its original equilibrium state. Results of variable temperature Hall-effect measurements performed under these conditions show that the sheet carrier concentration is increased as compared to measurements obtained in the dark but that the mobility is unchanged. The increase in the sheet carrier concentration after illumination results from the decrease of the surface and interface depletion widths. Such measurements can provide a method for judging the quality of layers that are fully depleted of carriers. The mobility of a high-purity GaAs layer which becomes fully depleted of carriers at low temperatures in the dark, measures 180 000 cm2/V s at 77 K by this method. Photocapacitance-voltage profiling measurements clearly show the change in the depletion widths. A model is presented which accurately depicts the temperature dependence of the band-bending potentials at the surface and interface after illumination with above band-gap light.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349738
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  • 7
    Electronic Resource
    Electronic Resource
    The effect of Tb and Gd composition on the corrosion resistance of sputtered GdTbFeCo thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5310-5312 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of GdxTby(Fe92Co8)100-x-y alloy thin films (about 200 nm in thickness) on glass substrates was prepared by dc magnetron sputtering using composite targets of pure Fe, Tb, Gd, and Co. Film composition was changed by varying the area percent of Tb and Gd in the target from 0% to 24%. In order to study the individual and combined effects of Gd and Tb, alloys of GdFeCo, TbFeCo, and GdTbFeCo were compared to each other and to an Fe92Co8 alloy. These comparisons were made on the basis of standard electrochemical tests, including anodic polarization as well as measurement of open circuit potentials and potential decay, in deaerated 0.15-M NaH2PO4 buffer solution (pH=4) at 25 °C. Results indicate that additions of Gd and Tb decrease the corrosion current of the Fe92Co8 alloy by a factor of 10 or more. Both Gd and Tb show very similar effects on the corrosion behavior of FeCo. Results suggest that a total of about 24% Gd and/or Tb may represent an optimum level for improving the corrosion resistance of GdTbFeCo magneto-optical thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344594
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  • 8
    Electronic Resource
    Electronic Resource
    Si delta-doped In0.15Ga0.85As/GaAs strained quantum well by atmospheric pressure metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 276-278 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si delta-doped In0.15Ga0.85As/GaAs strained quantum wells are demonstrated by atmospheric pressure metalorganic chemical vapor deposition. The samples were characterized by variable temperature Hall effect, high magnetic field magnetoresistance, quantum Hall effect, capacitance-voltage measurements (C-V), and secondary-ion mass spectroscopy. The C-V profile showed a full width at half maximum as narrow as 15 A(ring). Two-dimensional electron gas transport was verified by observing step-like structures in the quantum Hall effect in samples containing sheet densities less than 5×1012 cm−2. Sheet densities as high as 1.0×1013 cm−2 were achieved. C and O contamination were not observed during the Si delta-doping process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352128
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  • 9
    Electronic Resource
    Electronic Resource
    Spectroscopic studies of the influence of intentionally increased CO partial pressure on the incorporation of residual C impurities in molecular beam epitaxy GaAs (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2438-2440 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-purity Si-doped molecular beam epitaxy (MBE) GaAs layers grown with and without the intentional introduction of CO gas have been characterized by Hall effect measurements, photoluminescence, and photothermal ionization spectroscopy. The results indicate that CO itself is not the source of residual C acceptor impurities in MBE GaAs samples. The observations of the correlation of residual C impurity incorporation with the residual CO gas in the MBE growth chamber suggest that the partial pressure of CO, PCO , gives a quantitative indication of background levels of hydrocarbons which are the source of C acceptors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100410
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  • 10
    Electronic Resource
    Electronic Resource
    High-purity epitaxial indium phosphide grown by the hydride technique (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1868-1870 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium phosphide layers with electron mobilities at liquid-nitrogen temperature of 91 000–125 000 cm2 /V s and carrier concentrations of 3–6×1014 cm−3 have been routinely grown by hydride vapor phase epitaxy. This 77 K mobility is significantly higher than the best previously reported for hydride vapor phase epitaxial InP. Analysis by variable temperature Hall effect, photothermal ionization spectroscopy, photoluminescence, and magnetophotoluminescence confirms the high purity of the samples. The influence of O2 on Si incorporation (injected over the In source) has also been studied. The injected oxygen did not significantly influence the silicon donor concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100483
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