Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
88 (2000), S. 3522-3526
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this report we present a procedure to fabricate highly transmissive superconducting Nb-In0.77Ga0.23As contacts. A combination of a sulphur passivation of the etched semiconductor prior to the deposition of Nb and an annealing step is used. To quantitatively classify the transparency of the contacts, transport measurements of the differential conductance are carried out at 300 mK and compared with a model given by Blonder, Tinkham, and Klapwijk [Phys. Rev. B 25, 4515 (1981)]. The procedure yields almost ideal superconductor-semiconductor contacts. Additionally, a high reproducibility of the contact transparency is achieved. The results are interpreted in terms of diffusion of In in both the niobium and the In0.77Ga0.23As. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1288504
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