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  • 1
    Digitale Medien
    Digitale Medien
    Amplification of transverse acoustic phonons in quantum well heterostructures with piezoelectric interaction (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3934-3941 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have analyzed amplification of transverse phonons confined in quantum well (QW) heterostructures through piezoelectric electron–phonon interaction with drifting electrons. It was found that this mechanism of interaction couples the low-dimensional electrons and the shear-horizontal (SH) confined phonons. We have studied the electrostatic potential accompanying the SH waves and found that efficient interaction can be achieved for the lowest antisymmetric SH phonon branch in a narrow band of phonon frequencies. For AlGaAs QWs the amplification coefficient was calculated to be on the order of 100 cm−1 in the sub-THz phonon frequency range. These results suggest an electrical method for coherent phonon generation in the technologically well-developed AlGaAs QW heterostructures. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1402145
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  • 2
    Digitale Medien
    Digitale Medien
    Coherent optical phonon generation by the electric current in quantum wells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4178-4180 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This letter addresses the effect of generation of confined LO phonons by drifting electrons in quantum wells. We have derived a general formula for the phonon increment as a function of phonon wave vector, electron drift velocity, and structure parameters. Numerical estimates of the phonon increment and the phonon lifetimes have shown that AlAs/GaAs/AlAs and GaSb/InSb/GaSb quantum well structures can demonstrate the effect of coherent LO phonon generation by the electric current. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1334653
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  • 3
    Digitale Medien
    Digitale Medien
    Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1969-1971 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A detailed study of photoluminescence (PL) of GaN(1 nm)/Al0.2Ga0.8N(3.3 nm) twenty periods superlattice grown via metal-organic chemical vapor deposition is presented. The dependence of the PL emission energy, linewidth, and intensity on temperature, in the low temperature regime, is consistent with recombination mechanisms involving bandtail states attributed to a small degree of interfacial disorder. The activation energy of the nonradiative centers in our superlattice agrees well with the value we derive for the width of the tail-state distribution. Moreover, we find that the average phonon energy of the phonons that control the interband PL energy at high temperatures is larger for the superlattice than for a high-quality GaN film. This observation is consistent with model calculations predicting the phonon mode properties of GaN–AlN-based wurtzite heterostructures. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.126225
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  • 4
    Digitale Medien
    Digitale Medien
    Cerenkov generation of high-frequency confined acoustic phonons in quantum wells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1869-1871 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We analyze the Cerenkov emission of high-frequency confined acoustic phonons by drifting electrons in a quantum well. We find that the electron drift can cause strong phonon amplification (generation). A general formula for the gain coefficient α is obtained as a function of the phonon frequency and the structure parameters. The gain coefficient increases sharply in the short-wave region. For the example of a Si/SiGe/Si device, it is shown that the amplification coefficients of the order of hundreds of cm−1 can be achieved in the subterahertz frequency range. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.126195
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  • 5
    Digitale Medien
    Digitale Medien
    Transport phenomena in n-MnxHg1−x Te/Cd0.96Zn0.04Te epitaxial films (1997)
    Springer
    Semiconductors 31 (1997), S. 218-221 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract The results of an experimental study of samples of MnxHg1−x Te films grown by liquid-phase epitaxy on a Cd0.96Zn0.04Te substrate are presented. It shows that, as a result of the diffusion of cadmium from the substrate, a CdxMnyHg1−x−y Te film with a variable band-gap layer is formed close to the 〈epitaxial-film〉-substrate interface. The appearance of this variable band gap is revealed by the transport phenomena. The temperature dependence of the band gap E g (T) is determined in a linear approximation on T from the results of a theoretical analysis of the temperature dependences of the free-carrier concentration and mobility. It is shown that averaging the semiempirical dependences for the ternary compounds with the extreme compositions, using the virtual-crystal approximation, can produce large errors when determining E g (T) in a specific semiconductor.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187115
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  • 6
    Digitale Medien
    Digitale Medien
    Influence of microwave treatment on the electrophysical characteristics of technically important semiconductors and surface-barrier structures (1998)
    Springer
    Technical physics 43 (1998), S. 1445-1449 
    Details
    ISSN: 1090-6525
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Abstract An investigation is made of changes in the electrophysical parameters of narrow-gap (CdxHg1−x Te x=0.22–0.24) and wide-gap (gallium arsenide, indium and gallium phosphides) semiconductor materials and Schottky-barrier diode structures based on these materials, stimulated by microwave electromagnetic radiation. It is shown that the parameters of materials and device structures may be improved by defect gettering. An analysis is made of possible mechanisms for the interaction between microwave radiation and the objects being studied.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1259222
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