ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We measured the Schottky barrier heights and specific contact resistivities of four different metals on p-type GaN. The Schottky barrier heights of Pt, Ni, Au, and Ti were obtained from the current-voltage characteristics to be 0.50, 0.50, 0.57, and 0.65 eV, respectively. The specific contact resistivities were 0.013, 0.015, 0.026, and 0.035 Ω⋅cm2, respectively. Our experimental results proved that the Schottky barrier heights and specific contact resistivities decrease with increase in metal work function as expected theoretically. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117237
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