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  • 1
    Electronic Resource
    Electronic Resource
    Interfaces of Fe/Si multilayered films with a strong antiferromagnetic coupling analyzed by optical and magneto-optical spectroscopies (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2903-2910 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe/Si multilayered films (MLF) exhibiting a strong antiferromagnetic (AF) coupling were investigated by optical and magneto-optical (MO) spectroscopies. The results were compared with the computer-simulated spectra based on various structural models of MLF. It was shown that neither semiconducting FeSi2 nor ε-FeSi can be considered as the spacer layers in the Fe/Si MLF for the strong AF coupling. The optical properties of the spacer extracted from the effective optical response of the MLF strongly support its metallic nature. A reasonable agreement between experimental and simulated equatorial-Kerr-effect spectra was obtained with the fitted optical parameters of the spacer with the FeSi stoichiometry. Comparison of the extracted optical properties of the spacer with the calculated ones by using the first principles showed that a B2-phase metallic FeSi compound is spontaneously formed at the interfaces during deposition. For the Fe/Si system with ultrathin Fe and Si sublayers (thinner than 1 nm), our optical data indicate that the structure of the whole MLF is close to the amorphous and semiconducting ε-FeSi. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1392955
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  • 2
    Electronic Resource
    Electronic Resource
    Magneto-optical spectroscopy study of the solid-state reaction in Ti/Ni multilayered films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2430-2436 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparative study of the solid-state reaction (SSR) in a series of Ti/Ni multilayered films (MLF) with a bilayer period of 0.65–22.2 nm and constant Ti to Ni sublayer thickness ratio has been performed by magneto-optical (MO) spectroscopy as well as x-ray diffraction (XRD). The spectral and sublayer-thickness dependences of the MO properties of the Ti/Ni MLF were explained on the basis of the electromagnetic theory. A threshold nominal Ni-sublayer thickness of about 3 nm in the as-deposited Ti/Ni MLF is necessary for observing the equatorial Kerr effect. Such a fact is explained by the formation, by solid-state reaction, of nonmagnetic alloyed regions between pure components. The SSR in the Ti/Ni MLF caused by the low temperature annealing leads to a formation of an amorphous Ti/Ni alloy and takes place mainly in Ti/Ni MLF with "thick" sublayers. In the case of Ti/Ni MLF, MO turns out to be more sensitive in determining the thickness of the reacted zone, while XRD is more useful for the structural analysis. It was also suggested that the very thin nonreacted Ni sublayers have MO properties different from the bulk. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287779
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  • 3
    Electronic Resource
    Electronic Resource
    Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6039-6042 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 6H–SiC wafers were implanted at room temperature (RT) and at 1700 °C high temperature (HT) with 50 keVAl+ ions to doses from 1.4×1014 to 1.4×1016 cm−2. Compared to samples implanted at RT, the samples implanted at high temperature display considerable aluminum redistribution. The diffusion of Al is shown to be a transient effect with different decay times in the near-surface region and in the bulk. Investigation of the crystalline structure indicated that in the near-surface region dislocation loops grow in size and Al precipitates are formed as the dose of Al implanted at HT is increased. Changes in the structure of the implanted layer may have a strong effect on the redistribution of Al. The observed redistribution can be explained by a dissociative diffusion mechanism during the high-temperature implantation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371651
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  • 4
    Electronic Resource
    Electronic Resource
    Beams of short lived nuclei by selective laser ionization in a gas cell (2000)
    Springer
    Hyperfine interactions 127 (2000), S. 401-408 
    Details
    ISSN: 1572-9540
    Keywords: resonant ionization ; laser ion source ; radioactive isotopes nickel ; cobalt ; rhodium
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Resonant laser ionization in a gas cell has been implemented at the Leuven Isotope Separator On Line facility to produce beams of short lived radioactive nuclei and to study their decay characteristics. A description of the laser ion source is presented together with technical details on the laser system, the gas cell and the gas purification system. Results from off line as well as on line measurements are discussed. The new laser ion source has allowed β decay studies of neutron deficient (54Ni, 92Rh) as well as neutron rich (up to 74Ni and 70Co) isotopes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1012657431795
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