Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 2111-2113
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Spontaneous formation of stacking faults in heavily nitrogen-doped 4H-polytype silicon carbide crystals have been observed by transmission electron microscopy (TEM). Faults were present in as-grown boules and additional faults were generated by annealing in argon at 1150 °C. All faults had identical structure consisting of six layers stacked in a cubic sequence as determined by high-resolution TEM, and were interpreted as a result of two Shockley partial dislocations gliding on two neighboring basal planes of SiC. It is argued that the energy of faulted 4H silicon carbide is lower than the energy of perfect heavily doped (n〉1×1019 cm−3) crystal at typical processing temperatures, thus providing a driving force for transformation. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1463203
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