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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 4557-4557 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 4849-4855 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The spin-forbidden radiative decays of the lowest energy metastable electronic states of O+2 and NO+ have been studied using a Fourier transform ion cyclotron resonance mass spectrometer. The metastable species are stored in the mass spectrometer for several hundreds of milliseconds and then selectively detected by pulsing CO2 into the ion trap and monitoring the formation of CO+2. By varying the delay time between formation of the metastable ions and injection of CO2, apparent radiative lifetimes of 101 ms for O+2(a 4Πu) and 530 ms for NO+(a 3Σ+) are measured. Our results are compared with literature values and with a theoretical calculation. The theoretical model, demonstrated for O+2, is based on spin–orbit coupling between the a 4Πu and A2Πu states and upon spin–rotation mixing of the different spin components within the a 4Πu state. The results allow quantitative interpretation of our results and those available in the literature.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 359-361 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic ellipsometry was used to monitor excimer laser annealed thin (∼100 nm) amorphous silicon (a-Si) films grown on quartz substrates by low pressure chemical vapor deposition (LPCVD). The peak position of the imaginary part of the complex dielectric function ε2 was used to determine the degree of crystallization of the a-Si. The amplitude of ε2 at the Si E1 transition energy is found to be a good indicator of the polycrystalline silicon (poly-Si) grain size after laser annealing with good correlation between ex situ ellipsometric data and poly-Si grain sizes being observed. Spectroscopic ellipsometry provides a contactless, nondestructive, and simple technique for monitoring laser annealing both in situ during the annealing process or ex situ after annealing. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 87 (1987), S. 2667-2676 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The photodissociation dynamics of the CO2⋅O+2 cluster are studied in a crossed ion beam–laser beam apparatus from λ=590 nm to λ=357 nm. At all wavelengths only CO+2/O2 products are observed even though O+2/CO2 products are lower in energy by 1.71 eV. The absolute cross section for photodestruction of CO2⋅O+2 is measured and increases smoothly from less than 1×10−18 cm2 at 590 nm to approximately 7×10−18 cm2 at 357 nm. In the range 590–458 nm ground electronic state CO+2(X 2Π)/O2(X 3∑) products are formed. Arguments are made that indicate that the O2 product is selectively vibrationally excited to the highest level energetically allowed (ν=0,1, or 2 depending on the wavelength). Asymmetry parameter analysis indicates that the photoexcited state of CO2⋅O+2 accessed is repulsive and the cluster dissociates in times short compared to a rotational period. At 357 nm the mechanism changes. Arguments are made that unambiguously indicate the O2 product is electronically excited at this wavelength and the product states are CO+2(X 2Π)/O2(a 1Δ). In addition, 10%–25% of the photoexcited clusters at 357 nm may initially be formed in a bound state that subsequently vibrationally predissociates. The large majority of the products at this wavelength are formed by direct dissociation from a repulsive state, however, similar to the longer wavelength data.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 86 (1987), S. 3283-3291 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A photodissociation study of SO2 ⋅ O+2 is presented. The experiments were carried out on mass selected ion beams that were crossed with a polarized laser beam and then photoproducts were mass and energy analyzed. The SO2 ⋅ O+2 ions were formed by three body association reactions in a pressure and temperature dependent ion source. Studies were carried out at wavelengths of 582, 514, 488, 458, and 357±7 nm using an argon ion laser/dye laser system. Both O+2/SO2 and SO+2/O2 photoproducts were observed and the branching ratio measured as a function of λ. In addition, product kinetic energy distributions and angular distributions (asymmetry parameters) were measured and statistical phase space theory calculations were carried out. The results indicate the O+2/SO2 products are formed from photon absorption to a bound excited state at all wavelengths followed by internal conversion to the ground state and statistical vibrational predissociation. The SO+2/O2 products are formed by two mechanisms. At long wavelengths (582 nm) the products are formed exclusively by photon absorption to a bound state followed by internal conversion and statistical predissociation from the ground state. At short wavelengths (357 nm) direct dissociation from a repulsive upper state dominates. Both mechanisms are involved at intermediate wavelengths. Arguments are made that both the bound and repulsive upper states correlate to SO+2(X˜ 1A1)/O2(b 1∑+g) products and that the bound upper state corresponds to the low energy band in the photodissociation cross section measurements of Hodges and Vanderhoff and the repulsive state to the high energy band.
    Type of Medium: Electronic Resource
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