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  • 1
    Electronic Resource
    Electronic Resource
    Synchronization of high-frequency vibrations of slipping phase centers in a tin whisker under microwave radiation (1998)
    Springer
    Journal of experimental and theoretical physics 86 (1998), S. 745-750 
    Details
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Current-voltage characteristics of a system with a variable number of slipping phase centers resulting from phase separation in a tin whisker under external microwave field with a frequency Ω/2π≅35–45 GHz have been studied experimentally. Emergence and disappearance of steps with zero slope in a whisker’s current-voltage characteristic at U m/n =(m/n)U Ω, where m and n are integers and U Ω is determined by Josephson’s formula ℏΩ=2eU Ω, have been investigated. Microwave field generated by slipping phase centers is nonharmonic, and the system of slipping phase centers permits synchronization of internal oscillations at a microwave frequency by an external field with a frequency which is the n-th harmonic of internal oscillations. The estimated microwave power generated by a whisker is 10−8 W. Stimulation of superconductivity in a current-carrying whisker has been detected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.558535
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  • 2
    Electronic Resource
    Electronic Resource
    Photoresist stripping in afterglow of Ar-O2 microwave plasma (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4910-4916 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The experimental investigation of the photoresist etching rate in the afterglow of Ar-O2 microwave plasma has been performed. It was found that up to 50% Ar can be added to O2 without etching rate decrease. A high photoresist etching rate of 2.9 μm/min has been achieved. A mathematical model based on the one-dimensional mass continuity equation for atomic oxygen, taken to be responsible for the etching process, has been proposed. Modeling of the Ar-O2 afterglow microwave photoresist stripping process was performed. The simulated behavior of the atomic oxygen flux shows a similar dependence with Ar dilution and pressure as the experimentally observed photoresist etching rate. It indicates that the photoresist etching rate is determined by the atomic oxygen flux to the substrate. The proposed model explains the measured dependencies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355779
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  • 3
    Electronic Resource
    Electronic Resource
    Plasma deposition of hydrogenated amorphous silicon: Effect of rf power (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 575-580 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The experimentally determined growth rate power dependence of plasma-enhanced chemical-vapor-deposited amorphous silicon was compared with the predicted dependence for the case when the SiH3 radicals are the dominant contributors to film growth. The higher experimental growth rate compared to its calculated value can be explained by the influence of Si2H6 produced in the discharge. The maximum of the growth rate was found to be around 50 mW/cm3 . The decrease of the growth rate at powers exceeding 50 mW/cm3 can be explained by the increased influence of hydrogen, which is consistent with the measurements of the refractive index of the deposited films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343110
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of plasma-deposited a-SiGe:H alloys: Role of growth temperature and postgrowth anneal (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6496-6504 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Basic properties of hydrogenated amorphous silicon–germanium (a-SiGe:H) alloys deposited by plasma-enhanced chemical-vapor deposition were studied. We found that there is an optimal growth temperature in the range 250–280 °C. Infrared-absorption spectra measurements show that in this temperature range the alloys have optimal composition of hydrogen content and bonding, providing a minimum in dangling bond defect density Ns and a high photoconductivity σph. Growth at lower temperatures results in hydrogen-rich alloys with high Ns. Hydrogen in these alloys is mainly bonded as SiH2 and as clusters on internal voids. Growth at temperatures above the optimal value gives less deterioration of the properties of a-SiGe:H than the growth below this optimal temperature. We found two different dependencies of σph on Ns: in optimized alloys σph changes proportionally to N−1s and in low-temperature alloys σph decreases more steeply with N−1s due to a decrease in electron mobility. It is shown that annealing of a-SiGe:H causes a sharp increase in Ns starting at annealing temperatures about 20 °C below the temperature at which the alloy was grown. We observed a new phenomenon that during annealing Ns increases much more (by two orders of magnitude) than the photoconductivity decreases (only factor of 5). The entropy-based model was applied to explain this experimental phenomenon. We found that annealing shifted the centrum energy of the D+/0 dangling bond levels to the valence-band edge. The rate of electron recombination lowers due to this shift and the change in the effective electron capture crosssection of the defects, and therefore the decrease in σph is smaller than the increase in Ns. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363640
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  • 5
    Electronic Resource
    Electronic Resource
    Hydrogenated amorphous silicon transverse junction solar cell (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 209-210 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we introduce a new thin film solar cell design on amorphous silicon, called the transverse junction solar cell. In this concept, the p-i-n junction is formed perpendicular to the surface. With conventional deposition and silicon device processing techniques test cells have been made with a conversion efficiency up to 5.2%±1.4% under standard AM1.5 illumination. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120687
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  • 6
    Electronic Resource
    Electronic Resource
    Use of heavy-ion accelerators to produce nuclear membranes (1989)
    Springer
    Atomic energy 67 (1989), S. 763-770 
    Details
    ISSN: 1573-8205
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Physics
    Notes: Conclusion Analysis of the state-of-the-art of the scientific and engineering aspects of the development and application of nuclear membranes shows that rapid progress has been made in the quantitative and qualitative respects. Fields where the use of nuclear membranes is particularly effective have now been determined. Nuclear membranes with pores measuring 0.5–1 μm in size are used extensively for analytical purposes in physicochemical studies and in biological and medical experiments. Membranes with pores of diameter 0.1–0.2 μm are used to make filters for fine purification of technological materials in the fabrication of semiconductor devices. Structures with the smallest pores (〈0.1 μm) are used in the technique of thorough gas treatment and in the microbiological industry. The demand for nuclear membranes will rise rapidly. In view of this, it is important to develop and build customized accelerators for the mass production of high-quality filtration material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01123341
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  • 7
    Electronic Resource
    Electronic Resource
    Increase in vagal tone and limitation of cardiac arrhythmias during adaptation to continuous stress (1990)
    Springer
    Bulletin of experimental biology and medicine 109 (1990), S. 555-557 
    Details
    ISSN: 1573-8221
    Keywords: stress ; adaptation ; cardiac arrhythmias ; vagal tone
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00839863
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  • 8
    Electronic Resource
    Electronic Resource
    Coprecipitation of Pu (IV) with organic coprecipitants (1961)
    Springer
    Atomic energy 8 (1961), S. 135-136 
    Details
    ISSN: 1573-8205
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01481211
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of sulfur-containing radioprotective substances on tissue respiration and phosphorylation (1967)
    Springer
    Bulletin of experimental biology and medicine 64 (1967), S. 843-844 
    Details
    ISSN: 1573-8221
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00786274
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  • 10
    Electronic Resource
    Electronic Resource
    Role of cholinergic regulation of the heart in the protective antiarrhythmic effect of adaptation to continuous moderate stress (1995)
    Springer
    Bulletin of experimental biology and medicine 120 (1995), S. 681-684 
    Details
    ISSN: 1573-8221
    Keywords: stress ; adaptation ; cholinergic regulation ; heart
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Rats were adapted to the continuous action of moderate immobilization stress for 1, 5, and 15 days. Thereafter the threshold of ventricular fibrillation and the heart rate were compared with biochemical indexes of adrenergic and cholinergic regulation of the heart, namely, catecholamine, cAMP, and cGMP content, acetylcholinesterase and choline acetyltransferase activity, the number and affinity of cardiac muscarinic receptors, and the catecholamine content in the adrenals. The threshold of ventricular fibrillation fell on the 1st day due to a predominance of the adrenergic regulatory effect over the cholinergic. Adaptation for 5 days is attended by a rise of the threshold of ventricular fibrillation to the norm and by marked bradycardia, both these shifts being abolished by atropine. Elevation of the heart's resistance to arrhythmias stems from the prevalence of cholinergic regulation. Equilibrium between the cholinergic and adrenergic effects on the heart was found as a results of 15-day adaptation. The normal threshold of ventricular fibrillation and the increased cardiac resistance to arrhythmia were preserved and dictated largely by adaptive changes at the cardiomycyte level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02444659
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