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  • 1
    Electronic Resource
    Electronic Resource
    Effects of donor doping on deep traps in In0.5Ga0.5P grown by liquid phase epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7395-7397 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of deep traps in undoped, Si-, S-, Se-, and Te-doped In0.5 Ga0.5 P layers grown on GaAs substrates by liquid phase epitaxy are investigated by deep level transient spectroscopy, thermally stimulated capacitance, and Hall measurements. Only one kind of deep trap is observed in undoped layer. Among the doped layers, it is only in the S-doped layer that the deep trap concentration is increased and the persistent photoconductivity is observed. Furthermore, the deep trap properties in undoped and S-doped layers are nearly the same. Considering the amount of residual S atom in the undoped layer, it is suggested that the deep trap in the undoped layer may result from the residual S impurity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360390
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  • 2
    Electronic Resource
    Electronic Resource
    Group-VI impurity-related DX centers in In0.18 Ga0.82As0.28 P0.72 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4211-4213 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Properties of deep levels in S-, Se-, and Te-doped In0.18Ga0.82As0.2P0.72 grown on GaAs0.61P0.39 substrates by liquid phase epitaxy are studied by deep level transient spectroscopy and thermally stimulated capacitance measurements. The donor-related deep levels are observed and their activation energies are found to be 0.26, 0.23, and 0.14 eV for S-, Se-, and Te-doped In0.18Ga0.82As0.28P0.72, respectively. Persistent photoconductivity is observed in all the samples doped with these impurities. It is clear from these results that the S, Se, and Te donors form DX centers in In0.18Ga0.82As0.28P0.72. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363376
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  • 3
    Electronic Resource
    Electronic Resource
    Interface properties of (NH4)2Sx-treated In0.5Ga0.5P Schottky contacts (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2202-2204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of (NH4)2Sx solution treatment on the interface properties of metal-In0.5Ga0.5P Schottky contacts have been investigated by capacitance-voltage measurements and deep-level transient spectroscopy measurements. The (NH4)2Sx-treated samples show Schottky barrier heights that are more sensitive to the metal work functions. It is also found that (NH4)2Sx treatment of In0.5Ga0.5P can passivate the phosphorus-vacancy-related interface deep traps of Schottky contacts as well as suppress the generation of interface deep traps due to heat treatment. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358801
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of oxygen on the electrical and optical properties of In0.5Ga0.5P grown by liquid-phase epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 512-516 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of oxygen on the electrical and optical properties of In0.5Ga0.5P epitaxial layers grown on (100) GaAs by liquid-phase epitaxy has been investigated by adding Ga2O3 to the growth melt. As the amount of Ga2O3 increases, the carrier concentration at 300 K decreases from 4×1016 to 4×1015 cm−3 and the Hall mobility at 77 K increases from 2400 to 4000 cm2/V s. The photoluminescence at 17 K shows that the peak intensity of an extrinsic transition in the In0.5Ga0.5P layer is reduced when Ga2O3 is added to the growth melt. These facts indicate that the main effect of Ga2O3 is the reduction of impurity concentration in the growth melt. In the In0.5Ga0.5P layer grown from the Ga2O3-added growth melt, the same deep trap, with an activation energy of 0.29 eV, as in an undoped layer is observed but the trap density is decreased. This implies that the deep trap is not due to a simple intrinsic defect, but related to an impurity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359033
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  • 5
    Electronic Resource
    Electronic Resource
    Investigation of electrical properties and stability of Schottky contacts on (NH4)2Sx-treated n- and p-type In0.5Ga0.5P (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2482-2488 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study on the interface properties of Schottky contacts on (NH4)2Sx-treated n- and p-type In0.5Ga0.5P is carried out. The effects of sulfur (S) treatment on Schottky barrier height are investigated by employing capacitance-voltage and current-voltage (I-V) measurements. It is also demonstrated that the passivation effects of S treatments on the interface traps can be monitored by deep level transient spectroscopy (DLTS) measurements. It is observed that the S treatment increases the dependence of Schottky barrier height on the metal work function. The interface traps in the Schottky contact formed by the heat treatment are found to give their energy state above midgap. It is found that the S treatment can passivate these interface traps as well as suppress their generation under the heat treatment. For both n- and p-In0.5Ga0.5P, contact-related majority carrier traps, which are different from the thermally generated interface traps, are observed at the Al-In0.5Ga0.5P interface and they can be annealed out by a heat treatment at 350 oC. It is also found that the I-V characteristics of Au/InGaP diodes formed on the S-treated surface degrade more rapidly than those formed on the untreated surface. Through cross-sectional transmission electron microscope observation, this poorer electrical reliability of Au contact on S-treated surfaces is attributed to the enhanced intermixing of group III elements with Au. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360102
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  • 6
    Electronic Resource
    Electronic Resource
    Dispersion of acoustic surface waves by velocity gradients (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2660-2664 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The perturbation theory of Auld [Acoustic Fields and Waves in Solids (Wiley, New York, 1973), Vol. II, p. 294], which describes the effect of a subsurface gradient on the velocity dispersion of surface waves, has been modified to a simpler form by an approximation using a newly defined velocity gradient for the case of isotropic materials. The modified theory is applied to nitrogen implantation in AISI 4140 steel with a velocity gradient of Gaussian profile, and compared with dispersion data obtained by the ultrasonic right-angle technique in the frequency range from 2.4 to 14.8 MHz. The good agreement between experiments and our theory suggests that the compound layer in the subsurface region plays a dominant role in causing the dispersion of acoustic surface waves.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339444
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  • 7
    Electronic Resource
    Electronic Resource
    Chemical trends of S-, Se-, and Te-related DX centers in InGaP (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2533-2535 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level properties of S-, Se-, and Te-doped In1−xGaxP layers grown by liquid phase epitaxy are studied by deep level transient spectroscopy and capacitance-temperature measurements. From the dependence of deep level properties on the impurity species and also from the existence of persistent photoconductivity, these impurity-related deep levels are attributed to the DX centers. The emission activation energies of these centers are observed to decrease as their atomic number increases. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114449
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  • 8
    Electronic Resource
    Electronic Resource
    Interface states generated by heat treatment in Au/InGaP Schottky diodes (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3589-3592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work is a study of the formation of interface traps in Au/n−In0.5Ga0.5P contacts. The effects of heat treatment near the ohmic alloying temperature on the characteristics of the Schottky diodes are studied using current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy measurements. New interface states that are distributed around 0.73 eV below the conduction band minimum were generated by heat treatment above 350 °C before metallization. In a sample that was heat treated at 400 °C for 30 min, the maximum density of generated interface states was estimated to be approximately 2×1011 cm−2 eV−1. The origin of these interface states is attributed to the transformation of a phosphorus vacancy that is generated by the vaporization of phosphorus from the surface of In0.5Ga0.5P.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352297
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of partial dopant ionization on the capacitance–voltage profiles of delta-doped structures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3491-3493 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of partial dopant ionization on the capacitance–voltage (C–V) characteristics of δ-doped structures have been investigated using self-consistent simulations. The simulation results show that partially ionized δ-doped dopants should produce a much sharper C–V profile compared with the case of fully ionized dopants. The results reveal also that the main factor which determines the spatial resolution and the full width at half maximum of the C–V peak is the spatial extent of the dopant profile rather than the spatial extent of the ground-state wave function. From this, it is suggested that the δ-doped C–V data should be interpreted always with the effect of partial ionization of δ-doped dopants. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121676
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of carrier flow on the temperature-dependent capacitance-voltage profiles of heterojunction structures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2740-2742 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We suggest a model which can explain the shifting of carrier concentration peaks in the temperature-dependent capacitance-voltage carrier profiles of heterojunction (HJ) structures. The shift of concentration peaks, which was frequently observed in the inverted isotype HJs was previously attributed to the traps at the heterointerface. The main feature of our model is the role of band offset as a limiter to the test signal current. The model can explain the difference of the peak shift in the carrier profiles of the normal and inverted type HJs. According to this model, the peak shifts at low temperatures occur naturally for the inverted type HJs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117696
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