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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of exposure and processing of thick PMMA for deep x-ray lithography using hard x-rays (1998)
    Springer
    Microsystem technologies 4 (1998), S. 86-88 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract  The first step for the fabrication of microstructures using deep x-ray lithography (DXRL) is the radiation of a sensitive polymer like poly(methyl methacrylate) (PMMA) by hard x-ray. At the Advanced Photon Source a dedicated beamline1 allowed the proper exposure of very thick resist (several mm). In this work we give a characterization of the PMMA/development system. As a result the resist dissolution rate (μm/min) of the exposed PMMA in different developer is calculated. We also analyze the conditions that produce bubbles and cracks in the thick exposed resist and investigate the scanning parameters that reduce them.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050102
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  • 2
    Electronic Resource
    Electronic Resource
    Local Measurements of Diffusion Length and Chemical Character of Metal Clusters in Multicrystalline Silicon (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 108-109 (Dec. 2005), p. 577-584 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: We present a comprehensive description of synchrotron-based analytical microprobe techniques used to locally measure the diffusion length and chemical character of metal clusters in multicrystalline silicon (mc-Si) solar cell material. The techniques discussed are (a) X-ray fluorescence microscopy, capable of determining the spatial distribution, elemental nature, size, morphology, and depth of metal-rich particles as small as 30 nm in diameter; (b) X-ray absorption microspectroscopy, capable of determining the chemical states of these metal-rich precipitates, (c) X-ray beam induced current (XBIC), which maps the minority carrier recombination activity, and (d) Spectrally-resolved XBIC, which maps the minority carrier diffusion length. Sensitivity limits, optimal synchrotron characteristics, and experimental flowcharts are discussed. These techniques have elucidated the nature and effects of metal-rich particles in mc-Si and the physical mechanisms limiting metal gettering from mc-Si, and have opened several promising new research directions
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/22/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.108-109.577.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Development of zone plates with a blazed profile for hard x-ray applications (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3537-3541 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A linear and a circular zone plate with a blazed zone profile (ZPBP) have been fabricated and characterized using synchrotron x rays. The ZPBPs have significantly improved performances in terms of focusing efficiency and the background near the focus compared to those of a zone plate with a square profile, of which the transmission function can be characterized by a binary square wave. In many respects and practical cases, an x-ray ZPBP may be used in a way analogous to an optical lens in the visible light region. In this article, the experimental characterization of the ZPBPs is presented and some special applications are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149956
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  • 4
    Electronic Resource
    Electronic Resource
    Nanometer focusing of hard x rays by phase zone plates (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2238-2241 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Focusing of 8 keV x rays to a spot size of 150 and 90 nm full width at half maximum have been demonstrated at the first- and third-order foci, respectively, of a phase zone plate (PZP). The PZP has a numerical aperture of 1.5 mrad and focusing efficiency of 13% for 8 keV x rays. A flux density gain of 121 000 was obtained at the first-order focus. In this article, the fabrication of the PZP and its experimental characterization are presented and some special applications are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149744
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  • 5
    Electronic Resource
    Electronic Resource
    Spectroellipsometric study of sol–gel derived potassium sodium strontium barium niobate films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4491-4496 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic ellipsometry (SE) was used to characterize the sol–gel derived (K0.5Na0.5)0.4(Sr0.6Ba0.4)0.8Nb2O6 (KNSBN) thin films as a function of sol concentration. In the analysis of the measured SE spectra, a modified double-layer Forouhi–Bloomer model was adopted to represent the optical properties of the KNSBN films. In this model, the films were assumed to consist of two layers—a bottom bulk KNSBN layer and a surface layer that composed of bulk KNSBN as well as void. Good agreement was obtained between the measured spectra and the model calculations in the chosen spectral region. Effective medium approximation theory was used to evaluate the effective refractive index for the surface layer. The results of SE have been correlated with atomic force microscopy measurements of surface roughness. Our analyses have shown that the surface layer had a lower refractive index than the bottom one. In addition, the refractive index and the surface roughness of the KNSBN films increase with the sol concentration. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355283
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  • 6
    Electronic Resource
    Electronic Resource
    Neutralized (NH4)2S solution passivation of III–V phosphide surfaces (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2977-2979 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron radiation photoelectron spectroscopy has been used to investigate III–V phosphide GaP and InP (100) surfaces treated with a neutralized (NH4)2S solution. Compared to the conventional basic (NH4)2S solution treatment, a thick sulfide layer with P–S bond and strong Ga–S (In–S) bond of high thermal stability is formed on the neutralized (NH4)2S-treated GaP (InP) (100) surfaces. The possible passivation mechanisms of the two (NH4)2S solutions to III–V phosphide surfaces are also discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122649
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  • 7
    Electronic Resource
    Electronic Resource
    Electron transport in ZnS (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1714-1719 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transport characteristics of N-ZnS are calculated by solving the Boltzmann transport equation using a variational method (including all major scattering mechanisms and screening). The dependence of electron mobility on carrier concentration, for a range of compensation ratio and ionized impurity concentration, are given at both 300 and 77 K. This provides a rapid means for determining material quality. Mobility limits of 230 cm2/V s (n∼1019 cm−3) and over 3000 cm2/V s (n〈1014 cm−3) are calculated at 300 and 77 K, respectively. The temperature dependence of the mobility is calculated and agrees favorably with experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346599
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  • 8
    Electronic Resource
    Electronic Resource
    Development of a hard x-ray imaging microscope : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2287-2289 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A hard x-ray imaging microscope based on a phase zone plate has been developed and tested. The zone plate, with a 5 cm focal length and a 0.2 μm smallest linewidth, was used to image 8 keV x rays from the samples. The imaging microscope can be used to obtain nearly diffraction-limited resolution over the entire imaging field, and its resolution is almost independent of source size and source motions. We have tested such an imaging microscope, and a resolution of about 0.4 μm was obtained. The images were obtained with an exposure time of less than 1 min, for a magnification factor of 30 in the x rays. The x rays were then converted into visible light, and another 7 times magnification were obtained by using a lens system coupled to a charge coupled device camera. The results from the imaging microscope, and possible applications, will be discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145666
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  • 9
    Electronic Resource
    Electronic Resource
    Phase-space measurement of stored electron beam at the Cornell Electron Storage Ring using a combination of slit array and CCD detector : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1859-1861 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new technique for fast phase-space measurement has been developed and tested during a recent APS/CHESS undulator run. A measurement time of a few seconds was obtained by using a slit array and a high-resolution position sensitive detector system. The detector system consists of a CdWO4 scintillation crystal, an optical imaging system, and a CCD detector. The short measurement time increases the measurement accuracy by reducing the effects from the instabilities of the electron beam in storage ring. The vertical emittance at the Cornell Electron Storage Ring in single-bunch and low-current mode was measured, and reasonable agreement with the expected values for both source size and source divergence were obtained (σy=75 μm and σy'=12 μrad). The effects of the finite size of the first slit on the measurement results are discussed, and a comprehensive data analysis procedure is described. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145806
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  • 10
    Electronic Resource
    Electronic Resource
    SHADOW: New developments (abstract) : INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2127-2127 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report on extensions that have been implemented in SHADOW,1 our x-ray and synchrotron sources modeling program. New types of sources have been implemented: (a) undulators are now part of the gallery of sources; (b) an optimization module has been implemented for systems with high losses. For the ray-tracing module, we have now implemented zone plates optical systems. Several new analysis programs have been implemented, as well as a new user's interface. Two modules, PLOTXY and SYSPLOT, in particular, have been extended and improved. PLOTXY can now plot the wave-front surface directly, while SYSPLOT can generate a realistic layout of the optical system. Work is currently in progress on the implementation of asymmetric crystal diffraction and effect of roughness on image formation. A first version of the User's Guide has also been written and will be presented at the meeting
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140845
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