Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 2841-2843
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thin-film microcrystalline silicon solar cells illuminated through the n layer were studied and compared with classical p-layer illuminated cells. To investigate the corresponding charge carrier extraction properties, variation of the intrinsic absorber layer thickness was carried out. It was found that the J–V characteristic and the quantum efficiency of the n- and p-side illuminated cells are almost identical in the thickness range investigated, up to 7 μm. No differences in the collection of photogenerated electrons or holes are observed. Hence, the illumination side of μc-Si:H single junction solar cells of conventional thickness may be randomly chosen without adverse effect on their performance. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1395518
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