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  • 1
    Digitale Medien
    Digitale Medien
    The low-temperature photochromic response of bismuth silicon oxide (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1443-1448 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Exposing the photorefractive material bismuth silicon oxide (BSO) at low temperatures to 2.4–3.3 eV light produces photochromic absorption bands. In undoped and Fe-doped BSO these bands appear to consist of a series of overlapping bands ranging from around 1.5 eV in the infrared to near the band edge. The infrared component is always weaker than the visible range contributions. The infrared portion anneals just above 100 K; in some samples this anneal is accompanied by the appearance of additional structure in the visible region. In undoped BSO the major anneal of the photochromic bands takes place above 200 K. If iron is present the photochromic bands are weaker and an anneal stage in the 120–150 K range appears. Bleaching with either 1.51 or 2.28 eV laser light uniformly lowered the photochromic bands in both undoped and Fe-doped BSO. In BSO:Al the aluminum electronically compensates the deep donor centers responsible for the yellow coloration observed in undoped crystals. At low temperatures, photoexcitation using near band-edge light produces the same overlapping bands at 1, 1.38, and 2.45 eV that were observed in BGO:Al. These bands anneal together between 80 and 100 K. The [AlO4]0 center which causes the coloration observed in smoky quartz is a plausible model for the photochromic bands in BSO:Al.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353243
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  • 2
    Digitale Medien
    Digitale Medien
    Deep defect levels of photorefractive sillenites (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 188-190 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The photorefractive effect in materials such as bismuth silicon oxide (BSO) depends on photoionizing deep defect levels inadvertently present rather than controllably introduced. Using thermal stimulated conductivity measurements, a preliminary attempt has been made at associating specific levels with a particular sillenite member and impurity dopants. While many of the features prevail throughout, significant changes occur when Ge is substituted for Si to give BGO and when p- (Al) and n-type (P) impurities are added to dope BSO.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114662
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  • 3
    Digitale Medien
    Digitale Medien
    Low-defect colorless Bi12SiO20 grown by hydrothermal techniques (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2162-2163 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Colorless single crystals of bismuth silicon oxide (BSO) have been grown using a pressure-balanced hydrothermal technique. The absorption shoulder which causes the yellow coloration observed in conventional BSO was completely missing in the hydrothermal material. The 10 K absorption edge was found to be 3.45 eV for the hydrothermal samples. Because of the absence of a low-temperature photochromic response and the observation of only very weak TSC peaks, it appears that the hydrothermal crystals represent near-intrinsic BSO. When a crystal was pulled from a melt of hydrothermal material, the yellow coloration returned.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.107070
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