ISSN:
0392-6737
Keywords:
Conductivity phenomena in semiconductors and insulators
;
General theories and computational techniques (including many-body perturbation theory, density-functional theory, atomic sphere approximation methods, Fourier decomposition methods, etc.)
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Summary A calculation method for the scattering cross-section σ of charged carriers on radiation-induced cluster defects has been developed using a spherical cluster model with rectangular potential barrier shape, of radius and height of 15 nm and 0.6 eV, respectively. Values of the cluster cross-section around 2·10−11 cm2 have been obtained for charged carrier energies from 10−4 eV to over 600 eV. Applying the relaxation-time approximation of the Boltzmann equation, the influence of clusters on silicon transport properties has been observed to be close to the acoustic-phonon one. The dependence of the Hall factor on radiation-induced clusters has been determined numerically for temperatures ranging from 5 K to 400 K. The results indicate that the presence of clusters of such dimensions would not change significantly the Hall coefficientR H.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02453253
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