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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 11 (1995), S. 143-148 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 10 (1994), S. 3880-3886 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5422-5425 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of sputtering deposited copper thin films has been investigated. Phase identification and surface morphology characterization were performed by x-ray diffraction, Raman spectroscopy, and atomic force microscopy (AFM). The copper film is first oxidized to Cu2O below 300 °C and then to CuO at higher temperatures (≥300 °C) near the surface of the copper. AFM results show that the as-deposited Cu film contains grains of similar sizes. After heat treatment at 200 °C, small grains are observed due to nucleation of the Cu2O phase. Further annealing in air leads to aggregation and growth of the grains whereas the grain boundary of the grains before coalescence is still evident. The Cu2O and CuO phases form alternating layers when the annealing temperature is 400 °C. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 168-170 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: β-SiC (3C–SiC) films were deposited on silicon substrates by electron cyclotron resonance chemical vapor deposition from SiH4/CH4/H2 mixtures at 500 °C. The crystalline structure and chemical composition of the deposited film were found to depend on the SiH4/CH4 flow ratio. With a sufficient energy supply from microwave power and a SiH4/CH4 flow ratio of 0.5 and lower, stoichiometric SiC could be deposited on Si substrates. Microcrystalline β-SiC was grown at a SiH4/CH4 flow ratio of 0.5, whereas amorphous SiC was obtained at the SiH4/CH4 flow ratios lower than 0.5. When the SiH4/CH4 flow ratio was above 0.5, only polycrystalline Si could be deposited. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1252-1254 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter presents the low temperature silicon epitaxial growth on p-type, 〈100〉 Si wafers by plasma-enhanced chemical vapor deposition with a stainless steel mesh. Following a modified ex situ spin-etch cleaning and an in situ H2 baking step, the epitaxial layer was grown at 313 °C using SiH4 (30 sccm)/H2 (22 sccm) with a pressure of 61 mTorr and a rf power of 10 W. Epitaxial layers were also grown at 323 °C with different silane flow rates. The epitaxial film contains higher defect density when the silane flow rate is low.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Bradford : Emerald
    Soldering & surface mount technology 17 (2005), S. 3-8 
    ISSN: 0954-0911
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Purpose - The effects of thermal fatigue and printed circuit board (PCB) surface finish on the pull strength, failure modes and reliability of chip scale package (CSP) solder joints were investigated. Design/methodology/approach - Mechanical pull test, metallographic examination and electrical measurement were used. Tin lead (Sn-Pb) and lead free (Sn-Ag-Cu) alloys were used with Au/Ni and organic solderability preservative (OSP) surface finishes. Findings - The experimental results showed that the pull strength of the Sn-Ag-Cu/(Au/Ni) solder joint did not change noticeably with an increasing number of thermal cycles. However, the pull strength of the Sn-Pb/(Au/Ni) solder joints drastically degraded and that of the Sn-Ag-Cu/OSP and Sn-Pb/OSP solder joints slightly decreased during thermal cycling. For both Sn-Ag-Cu and Sn-Pb alloys, the solder joint fracture of as-soldered samples was the main failure mode when an Au/Ni surface finish was used. For the Sn-Ag-Cu/(Au/Ni) and Sn-Ag-Cu/OSP solder joints, the proportion of component trace tearing considerably decreased, whereas that of PCB trace tearing considerably increased, during thermal cycling. The Weibull lifetimes of the solder joints were increasingly longer in the order of Sn-Pb/(Au/Ni), Sn-Pb/OSP, Sn-Ag-Cu/OSP, and Sn-Ag-Cu/(Au/Ni). Research limitations/implications - This was not an exhaustive study and all of the findings are for lead free and tin lead CSP solder joints, which perhaps limits the usefulness of the results elsewhere. Practical implications - A very useful source of information and impartial advice for engineers planning to conduct a switch from tin lead to lead free technology in their production lines. Originality/value - This paper fulfils an identified information/resources need and offers practical help to an engineer starting out on an engineering development.
    Type of Medium: Electronic Resource
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