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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 3948-3958 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A variety of nonphotochemical hole burning experiments are performed on the system pentacene (PC) in benzoic acid (BZA) crystals. These experiments and previously reported fluorescence line narrowing experiments are used to probe the nature of the inhomogeneous broadening of electronic transitions of chromophores in crystals and glasses. A microscopic model is presented which explains detailed results from both types of experiments. Two fundamental assumptions are made in formulating the model. First, there is a large degree of accidental degeneracy in the absolute energy distributions of the chromophores; i.e., molecules in different environments can have the same absolute energy. Second, this degeneracy is lifted when the electronic state is changed. Narrow band excitation of PC causes a well-defined change in the PC's local environment, producing a narrow spectral hole in the inhomogeneously broadened PC absorption origin and an antihole which is spectrally well-separated from the PC origin. The microscopic model is successful in explaining experimental results on correlations between hole widths and antihole widths, hole positions and antihole positions, and in explaining fluorescence line narrowing experiments on the correlation between the frequencies of resonant and nonresonant fluorescence and the broadening of nonresonant fluorescence. The result is a microscopic picture which demonstrates that narrow band excitation of an inhomogeneously broadened electronic transition involves molecules with a very wide distribution of absolute energies.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 44 (1979), S. 3925-3930 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1204-1208 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical damage thresholds of submicron-thick, electron beam deposited HfO2 and SiO2 films on BK-7 substrates have been measured by monitoring the emission of neutral constituents during excitation with time-delayed pairs of 70-ps laser pulses at a wavelength of 1064 nm. The dependence of the optical damage threshold on time delay provides evidence of the optical damage mechanism. For SiO2, linear absorption is the mechanism for energy deposition into the films by the laser beams. The data for HfO2 are less definitive, although linear absorption is the most likely damage mechanism. The behavior of the single-layer films is compared to multilayer HfO2-SiO2 high-reflector coatings, for which a "conditioning'' effect causes an increased optical damage threshold due to multiple pulse laser excitation at fluences below the single-pulse optical damage threshold.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3230-3232 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystals of gallium nitride were synthesized in silica aerogel host matrices by pyrolysis of dimeric dimethylgallium-diphenylamide precursor sequestered in the nanometer scale aerogel pores. Powder x-ray diffraction (XRD) and selected area electron-diffraction results verify the formation of hexagonal gallium nitride material in the aerogels, and Scherrer-broadening analysis of the XRD data indicate the gallium nitride particle size is ∼20 nm. Transmission electron microscopy results show that the gallium nitride nanoparticles have diameters between 10 and 40 nm with an average diameter of 23 nm. The synthesis parameters for the gallium nitride nanocrystals in the aerogel hosts are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 443-445 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that laser-surface interactions that cause optical surface damage of nominally transparent materials can be investigated by observing the effects of excitation by pairs of picosecond pulses separated by a variable time delay. Laser-induced emission of neutrals is used as the detection mechanism in the present experiments.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 84 (1986), S. 5463-5478 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a theoretical study of the optical dephasing of the electronic transitions of delocalized molecular dimer states. The dephasing arises from the dynamical interactions of the dimer states with the phonon bath of the host crystal. We introduce a general dephasing model for dimers with strong intermolecular interactions and analyze the consequences of the model with optical Redfield theory. A quantum mechanical microscopic model is developed in which the interaction Hamiltonian of the dimer states and the phonon bath states is clearly delineated. We treat both linear and quadratic excitation-phonon coupling in which the two molecules comprising the dimer may be coupled differently to the phonons. Couplings to acoustic, optical, and pseudolocal phonons (librations) are considered explicitly. The temperature dependence of the dephasing rates are obtained for scattering between delocalized dimer states, scattering to dimer librations and phonon-induced pure dephasing. These results are used to analyze the photon echo studies on pentacene dimers and tetracene dimers in p-terphenyl and on naphthalene dimers in perdeuteronaphthalene. In the pentacene dimers and tetracene dimers, we conclude that the dephasing results from scattering to the dimer librations via a one-phonon process. In addition, a quantitative value for the libron–phonon coupling is determined. In the naphthalene dimer system, we find scattering between delocalized dimer states, induced by linear excitation-phonon coupling, to be the predominant dephasing mechanism. A quantitative value is determined for the phonon coupling matrix element responsible for scattering between the delocalized states.
    Type of Medium: Electronic Resource
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