ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-resolution x-ray reflectivity (XR) and small-angle neutron scattering (SANS) are applied to characterize both the nonuniform depth profile and pore structure of a low-dielectric-constant (low-k) thin film as prepared on a silicon substrate. The XR data show that the density depth profile has a multilayered structure with a dense, nonporous top layer and a less dense, porous bulk layer. A scattering invariant analysis of the SANS data is used to determine the average chord length of the pores, (14.8±2.0) nm, independent of the depth profile. Given the elemental composition of the film, the XR and SANS data are combined to calculate the mass density of the top layer, (1.13±0.05) g/cm3, the porosity of the less dense layer, (0.28±0.10), and the wall density, (0.92±0.15) g/cm3. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1495079
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