Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Rate of Entry in Emulsion Polymerization: Free-Radical Entry Controlled by Aqueous Phase Growth (1994)
    s.l. : American Chemical Society
    Macromolecules 27 (1994), S. 3337-3340 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00090a030
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Anistropic hole formation in thin polymer films confined by walls (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 8204-8208 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report dewetting behavior of thermally annealed thin polymer strips of poly (styrene-b-butadiene-b-styrene) and polystyrene films that are laterally confined by polydimethylsiloxane walls on silicon substrate. Regularly spaced holes are initially nucleated on the polymer surface and then grow with the aid of the confining walls, resulting in the formation of distinctly observable, regularly spaced blocks of the strip. It is observed that the dependence of hole density on the film thickness severely deviates from the conventional capillary wave model. This anomaly may be related to the viscoleastic properties of the polymer film. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1409540
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Controlled polymer dewetting by physical confinement (2002)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 116 (2002), S. 7714-7718 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report ordering of polymer drops that takes place when a thin polystyrene film confined by polydimethylsiloxane walls dewets on a silicon substrate. When annealed above the glass transition temperature, the thin polymer film dewets, resulting in the formation of a regular structure inside and outside the confinement. It is found that the ordering becomes strongly suppressed as the film thickness increases and the pattern size decreases due to the physical confinement of the mold. As a result, the ordering can take place only when the wavelength of the capillary wave is smaller than the characteristic length of the physical confinement. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1467898
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Parallel and vertical morphologies in block copolymers of cylindrical domain (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 1253-1256 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a theoretical result on the ordering of cylindrical morphology in diblock and triblock copolymers. The equilibrium morphology of A–B diblock and A–B–A triblock copolymer films is shown to have the cylinders oriented parallel or vertical to the surface, depending on the film thickness and surface tensions. A criterion is derived that can be used to determine the conditions under which the orientation is parallel or vertical. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.475487
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Optical strength of Si–SixGe1−x direct-band-gap superlattices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3754-3757 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical strength is evaluated for various types of Si–SixGe1−x direct-band-gap superlattices. A method for the evaluation is developed that is compatible with a k⋅p method for indirect-band-gap constituent materials, which is more rigorous than the envelope-function approach. The optical matrix elements based on the more rigorous method are found to be an order of magnitude greater than the values previously reported based on the envelope-function approach.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357406
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Energy band structures of Si-SixGe1−x superlattices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5773-5777 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Energy band structures are presented for three different types of Si-SixGe1−x superlattices using an approach more rigorous than the envelope function approach and including spin-orbit and strain effects. The directness of the energy bands has been found to depend exclusively on the superlattice period. The energy extrema of the valence and conduction bands depend primarily on the thickness of the well material. The valence-band energy maxima vary much more with layer thickness than the conduction-band minima. The maximum attainable band gaps correspond approximately to the band gap of the germanium-containing material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358389
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Condition for no thermal runaway in cw semiconductor lasers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6503-6510 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A necessary and sufficient condition for no thermal runaway is given for cw double-heterostructure semiconductor lasers. No catastrophic damage at the mirror facet should occur when the condition is satisfied. The condition for no thermal runaway contains the dimension, operating conditions, and material properties of the double-heterostructure laser. As such, it can be used to systematically optimize the laser structure. Use of the condition is illustrated and a typical case analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355139
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Effect of processing conditions on the growth of strained Si1−XGeX layers on Si (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2361-2363 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate several factors that determine the surface morphology in heteroepitaxial growth of Si1−XGeX films on Si, which include composition, temperature, and pressure. Phase boundary lines are derived that define the regions for planar and island growth in terms of composition–temperature and composition–pressure. Also derived is the roughening characteristic length as a function of temperature, pressure, and characteristic time. Our results can explain the literature data satisfactorily. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368347
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Composition dependence of activation energy in solid phase epitaxial growth of Si1−xGex alloys (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6716-6719 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical model called the "multibody model'' is developed for the composition dependence of the activation energy. The model that is based on the diffusion required of the recrystallization for the solid phase epitaxy does not involve any adjustable parameters and is shown to represent experimental data satisfactorily. For the Si1−xGex alloys that are of diamond structure, the most logical choice is the "five-body model'' involving five atoms. The model is equally applicable to any other binary alloy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363745
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Simple conversion relationships for noncatalytic gas-solid reactions. Reply to comments (1982)
    s.l. : American Chemical Society
    Industrial and engineering chemistry 21 (1982), S. 356-357 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/i200017a026
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...