ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Semiconductor devices are usually formed on a single silicon wafer during a batchprocessing method. Individual devices are separated from the wafer during the wafer sawing ordicing step. Subsequent packaging processes are then performed on the individual devices, whoseedge portions are very susceptible to mechanical damage from the sawing process. Defects formedalong device edges due to the dicing saw blade often provide potential sites for serious reliabilityproblems. If the scribing area is reduced, the number of the separated devices from a single waferincreases, which results in productivity improvement. However, the closer the scribing position ofthe saw blade comes to the active device pattern, the greater possibility of sawing-induced damageto the active pattern is. Thus, this work shows methods to reduce the negative impact of the sawblade while maintaining close proximity of the scribe lines to the IC devices. In particular, this worksuggests that a decrease in the size of the diamond particles embedded in the saw blade and in therotation speed of the saw blade might contribute to the prevention of sawing-induced damage todevice patterns
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/54/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.345-346.485.pdf
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