ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Ceria based slurries with and without PVP were prepared for the polishing of patternedand blanket wafers. The changes in the cross-sectional profiles of the oxide as a function of thepolishing time and surfactant concentration were analyzed, in order to understand the mechanism bywhich the step height of the oxide is reduced during the CMP process. The reduction in thethickness as a function of the polishing time varied with the PVP surfactant concentration in thepatterned wafer. When the surfactant concentration was increased to 0.8wt%, the material removalrate of oxide in the patterned wafer approached a maximum. The maximum removal rate observedat a surfactant concentration of 0.8wt% was explained by the competing effects of the increasingnumber of active particles and the increasing thickness of the viscous layer due to the addition ofsurfactant
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/41/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.47-50.1494.pdf
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