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  • 1
    Electronic Resource
    Electronic Resource
    Influence of the temperature and excitation power on the optical properties of InGaAs/GaAs quantum wells grown on vicinal GaAs(001) surfaces (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2280-2289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence experiments were performed as a function of temperature and excitation intensity in order to investigate the optical properties of In0.1Ga0.9As/GaAs quantum wells grown on vicinal GaAs(001) substrates with different miscut angles. The misorientation of the surface played an important role and influenced the intensity, efficiency, energy, and full width at half maximum of the optical emission, as well as the segregation of indium atoms. It is shown that at high temperature the optical properties of InGaAs quantum wells grown on vicinal substrates are slightly inferior to ones of the same structure grown a nominal surface because of the faster escape of the carriers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389336
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  • 2
    Electronic Resource
    Electronic Resource
    Infrared to visible image frequency conversion in Cd(S,Se) glass composites (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1956-1958 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wave mixing experiments are reported using two infrared and one visible laser beams which are incident on a semiconductor doped glass. The mixing process produces infrared to visible image conversion via the material electronic nonlinearity with fast (less than 20 ps) time response.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101183
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  • 3
    Electronic Resource
    Electronic Resource
    Comparative Raman studies of cubic and hexagonal GaN epitaxial layers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4137-4140 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hexagonal and cubic GaN layers are grown on (001) GaAs substrates by means of molecular beam epitaxy. First order Raman spectra are taken from these layers at various incident laser wavelengths and temperatures. The T2 transverse-optical (TO) and longitudinal-optical (LO) frequencies of cubic GaN are determined, as well as the A1 TO and LO, E1 TO, and E2 frequencies of hexagonal GaN. The T2 TO frequency of cubic GaN lies between the A1 and E1 TO frequencies of hexagonal GaN as one expects comparing the lattice dynamics of zincblende and wurtzite type crystals. The T2 TO frequency is close to the calculated value but disagrees with a recently reported experimental value. For the hexagonal layer, all frequencies are close to those previously measured. A broad Raman structure below the A1 LO peak is interpreted in terms of a disturbed long range order of the hexagonal layer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361778
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  • 4
    Electronic Resource
    Electronic Resource
    Phase separation suppression in InGaN epitaxial layers due to biaxial strain (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 769-771 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase separation suppression due to external biaxial strain is observed in InxGa1−xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam epitaxy on unstrained GaN(001) buffers. Ab initio calculations carried out for the alloy free energy predict and Raman measurements confirm that biaxial strain suppress the formation of phase-separated In-rich quantum dots in the InxGa1−xN layers. Since quantum dots are effective radiative recombination centers in InGaN, we conclude that strain quenches an important channel of light emission in optoelectronic devices based on pseudobinary group-III nitride semiconductors. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436270
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  • 5
    Electronic Resource
    Electronic Resource
    Evidence of phase separation in cubic InxGa1−xN epitaxial layers by resonant Raman scattering (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3602-3604 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase separation effects in cubic InxGa1−xN epitaxial layers were investigated by means of resonant Raman scattering. The alloy epilayers were grown by radio-frequency plasma-assisted molecular beam epitaxy on GaAs (001) substrates. The results, which are confirmed by x-ray diffractometry (XRD) experiments, show the presence of In-rich inclusions in c-InGaN layers with x=0.19 and 0.33. In-rich inclusions were also found by XRD in a lower In-content layer with x=0.07. Compositional inhomogeneity of about 10% was observed through selective resonances of localized regions in the In-rich separated inclusions. We find that the In-rich separated phase has nearly the same composition in all analyzed samples (x≅0.8). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125401
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  • 6
    Electronic Resource
    Electronic Resource
    Structural properties and Raman modes of zinc blende InN epitaxial layers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 362-364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on x-ray diffraction and micro-Raman scattering studies on zinc blende InN epitaxial films. The samples were grown by molecular beam epitaxy on GaAs(001) substrates using a InAs layer as a buffer. The transverse-optical (TO) and longitudinal-optical phonon frequencies at Γ of c-InN are determined and compared to the corresponding values for c-GaN. Ab initio self-consistent calculations are carried out for the c-InN and c-GaN lattice parameters and TO phonon frequencies. A good agreement between theory and experiment is found. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123072
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  • 7
    Electronic Resource
    Electronic Resource
    Spinodal decomposition in BxGa1−xN and BxAl1−xN alloys (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1177-1179 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present first-principles calculations of the structural and thermodynamic properties of cubic BxGa1−xN and BxAl1−xN alloys. The calculations are based on the generalized quasichemical approach to disorder and composition effects and a pseudopotential-plane-wave approximation. The bulk moduli and lattice constants are found to vary linearly with the alloy composition. Due to the large lattice mismatch between BN and binaries GaN and AlN, the phase diagrams display large miscibility gaps in the temperature range usually adopted to grow the corresponding alloys. This explains the difficulties reported in growing these alloys with boron content higher than 0.1. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1450261
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  • 8
    Electronic Resource
    Electronic Resource
    Raman phonon modes of zinc blende InxGa1−xN alloy epitaxial layers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1095-1097 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transverse-optical (TO) and longitudinal-optical (LO) phonons of zinc blende InxGa1−xN (0≤x≤0.31) layers are observed through first-order micro-Raman scattering experiments. The samples are grown by molecular-beam epitaxy on GaAs (001) substrates, and x-ray diffraction measurements are performed to determine the epilayer alloy composition. Both the TO and LO phonons exhibit a one-mode-type behavior, and their frequencies display a linear dependence on the composition. The Raman data reported here are used to predict the A1 (TO) and E1 (TO) phonon frequencies of the hexagonal InxGa1−xN alloy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124608
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  • 9
    Electronic Resource
    Electronic Resource
    Valence band structure of cubic AlGaN/GaN superlattices (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1015-1017 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of different material parameters, spin-orbit interaction, and strain effects on the valence band structure of cubic AlGaN/GaN superlattices is investigated. One-particle hole state calculations are carried out within the k⋅p theory by means of a full six-band Luttinger-Kohn Hamiltonian in a plane-wave representation. It is shown that the use of distinct values for the Luttinger parameters for the barrier and well regions leads to significant changes in the hole levels, particularly for large Al content. Spin-orbit interaction effects are responsible for strong nonparabolicities due to the light- and split-off-hole bands mixing. Besides, the hole levels are very sensitive to strain effects. Thus, it is demonstrated that these effects cannot be neglected in a realistic description of the valence band structure of these materials. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125924
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  • 10
    Electronic Resource
    Electronic Resource
    Structural properties of cubic GaN epitaxial layers grown on β-SiC (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6322-6328 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-consistent tight-binding total energy calculations are performed to study the deposition of a few layers of cubic GaN on (100) β-SiC substrates. Cohesion energies, atomic displacements, dangling bond occupancies and surface reconstructions are calculated for a variety of epitaxial systems including monolayers of either Ga or N as well as single and double bilayers of GaN on either Si or C terminated substrates. The SiC substrates and Ga-N epitaxial layers are represented by 2×2 supercells of 9 Si and C monolayers plus the respective number of monolayers of Ga and N atoms. Depending on the system, surface atoms dimerize either symmetrically or asymmetrically resulting in either 2×1, c-2×2, or 2×2 surface reconstructions. At the substrate-epitaxial-layer interfaces, N binds stronger than Ga to either Si or C. Interface mixing is found to be energetically not advantageous for both C- and Si-terminated substrates, although for the latter the obtained small energy differences may suggest the possibility of mixing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363710
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