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  • 1
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new low-voltage contrast mechanism due to electron-hole pairs generated in the oxide by an electron beam was observed at electric fields lower than 3.5 MV/cm. This is in addition to the tunneling current microscopy (TCM) contrast mechanism observed at electric fields higher than 3.5 MV/cm. The new contrast mechanism is opposite in sign to the TCM contrast mechanism such that the image of a local thinning defect in the oxide is dark at low bias voltage and bright at higher bias voltage. Good contrast can be obtained at electric field as low as 2.4 MV/cm. Applications include large area imaging of oxide defects and quantitative mapping of small oxide thickness variations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 86 (1979), S. 0 
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: One hundred and sixty-three haemodynamic studies were done serially in 23 normotensive and 25 mildly hypertensive women during pregnancy. With all subjects resting in the left lateral position, heart rate, cardiac output, stroke volume, left ventricular work index, total peripheral vascular resistance and haematocrit were all significantly higher while plasma volume per unit body weight was significantly lower in the hypertensive than in the normotensive pregnant women. It is postulated that this hyperkinetic circulatory state is due to hyper-activity of the sympathetic adrenergic component of the autonomic nervous system in hypertensive pregnancy.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 30-35 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel laser-based apparatus is presented utilizing high harmonic radiation for visible pump–EUV probe experiments on ultrafast processes. True femtosecond temporal resolution is achieved by a monochromator making use of dedicated narrowband multilayer mirrors rather than gratings for selection of single harmonic orders in the photon energy range between 66 and 73 eV. First applications of this new light source for electron spectroscopy on gas phase helium and xenon demonstrate the selection of a single high harmonic order with the intensity ratio between the selected and its adjacent harmonic not exceeding 10:1. A pump–probe study of hot electron production on a solid Pt(110) surface yields a cross-correlation corresponding to a temporal system resolution of 100 fs. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 2166-2168 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Electrochemical etching is shown to produce slender cylindrical tungsten probes used as microelectrodes for micromachining or in electrochemical studies. A mathematical model is derived for diameter control of the microprobes and its validation is investigated through experiments. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4157-4159 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusivity of a strained heterostructure was theoretically investigated, and general diffusion equations with strain potential were deduced. There was an additional diffusivity by the strain potential gradient as well as by the concentration gradient. The strain-induced diffusivity was a function of concentration, and its temperature dependence was formulated. The activation energy of the strain-induced diffusivity was measured by high-resolution transmission electron microscopy. This result can be generally applied for the investigation of the diffusion in strained heterostructures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2481-2483 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anisotropic diffusion of Ge induced by nonuniform strain in SiGe/Si interfaces in the range of 700–850 °C is directly observed with medium-energy ion-scattering spectroscopy through its composition and strain profiles of atomic-layer depth resolution. For SiGe/Si interfaces with identical composition profiles but with different strain distributions, the anisotropic diffusion of Ge can be clearly correlated with the anisotropic relaxation of the nonuniform strain in the near-surface layer of several nm depth. The results suggest that atomic-scale strain control is critical to maintain abrupt SiGe/Si interfaces under thermal budget. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3606-3608 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for the dry thermal oxidation of a strained SiGe layer is proposed. By oxidation of a graded Si1−xGex layer, the effect of Ge pileup was significantly reduced and the undesirable strain relaxation by defect formation is prohibited. After oxidation, the oxidized SiGe layer was homogenized by postannealing process, and thereby a SiO2/SiGe interface with good structural properties was obtained. During postannealing, the homogenization was significantly enhanced by strain-induced diffusion, and it was clearly proved by the uphill diffusion. This result can propose an alternative oxidation method of strained SiGe/Si heterostructures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2240-2242 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new low-voltage contrast mechanism due to electron hole pairs generated in the oxide by an electron beam was observed at an electric field lower than 3.5 MV/cm in addition to the tunneling current microscopy (TCM) contrast mechanism at electric fields higher than 3.5 MV/cm. The new contrast mechanism is opposite in sign to the TCM contrast mechanism. Good contrast can be obtained at an electric field as low as 2.4 MV/cm, which is two to three times smaller than that needed for TCM contrast. Potential applications include large area imaging and quantitative imaging of oxide defects.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Cutaneous necrotizing eosinophilic vasculitis is a recently identified type of vasculitis that is characterized by an eosinophil-predominant necrotizing vasculitis affecting small dermal vessels. Clinically, it presents with pruritic erythematous and purpuric papules and plaques, peripheral eosinophilia and a good response to systemic steroid therapy. This vasculitis can be idiopathic or associated with connective tissue diseases. Although the pathogenic roles of eosinophil-derived granule proteins and interleukins have been documented in diseases associated with eosinophilia, a role of CD40 (a glycoprotein of the tumour necrosis factor receptor superfamily) has rarely been described. We describe two patients with idiopathic hypereosinophilic syndrome (HES) presenting with multiple erythematous patches and plaques on the lower extremities and Raynaud's phenomenon. They satisfied the criteria for the diagnosis of HES by clinical and laboratory investigations. Histopathology of the cutaneous lesions revealed prominent eosinophilic infiltration with local fibrinoid change in vessel walls in the dermis and subcutis. Immunohistochemical detection of CD3, CD4, CD8 and CD40 was performed. Infiltrating eosinophils were strongly stained by anti-CD40 monoclonal antibody. One patient improved with prednisolone, pentoxifylline and nifedipine, without recurrence. The other patient initially improved with steroids, but after self-withdrawal of steroid developed digital ischaemia that evolved to severe necrosis and required amputation. Cutaneous necrotizing eosinophilic vasculitis, Raynaud's phenomenon and digital gangrene may develop as cutaneous manifestations of HES. CD40 may play a part in the pathogenesis of eosinophilic vasculitis in HES.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Anaesthesia 58 (2003), S. 0 
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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