ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The TFTs array fabrication process for large-area TFT-LCD has been continuouslydeveloped for simplifying processing steps, improving performance and reducing cost in the processof mass production. In this study, the hydrogenated amorphous silicon (a-Si:H) TFTs with lowresistivity electrodes , silver thin films, were prepared by using the selective deposition method thatcombined lift-off and electroless plated processes. This developed process can direct pattern theelectrode of transistor devices without the etching process and provide ease processing steps. Theas-deposited Ag films were annealed at 200 oC for 10 minutes under N2 atmosphere. The resultsshows that the adhesion properties can be enhanced and the resistivity has been improved from 6.0μ,-cm, significantly decrease by 35%, of as-deposited Ag films by annealed. The thickness of Agthin film is about 100 nm and the r. m. s roughness value is 1.54 nm. The a-Si:H TFT with Ag thinfilms as source and drain electrodes had a field effect mobility of 0.18 cm2/Vs, a threshold voltage of2.65 V, and an on/off ratio of 3×104
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.561-565.1165.pdf
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