ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Large-scale silicon carbide nanowires are prepared by pure silicon powder and phenolicresin, which are mixed, molded, carbonizated, and then subjected to the microwave heating with arate of 10oC/min between 1300 and 1400oC in the static argon atmosphere for 0.5~2h. The patterns ofthe SiC nanowires are characterized by means of SEM, the composition of the samples are determinedthrough EDX. The prepared nanowires have the diameters between 20 to 100nm. The current resultsimply that liquid silicon can act as a catalyzer during the formation of SiC nanowires.IntroductionSince the discovery of carbon nanotubes by Iijima[1], there has been great interest in the synthesisand characterization of other one-dimensional (1D) structures. Nanowires, nanorods and nanobeltsconstitute an important class of 1D nanostructures, which provide models to study the relationshipbetween electrical transport, optical and other properties with dimensionality and sizeconfinemen[2~7]. The 1D nanowires can also act as active components in devices as revealed by recentinvestigations[8,9]. Up to now, several techniques for preparing SiC nanowires have been developed.Dai et al.[5] synthesized SiC nanorods via the reaction of carbon nanotubes with SiO. Zhou et al. [6]synthesized SiC nanowires by hot filament chemical vapor deposition (CVD). Liang et al.[9] grew SiCnanowires by carbothermal reduction of silica xerogels embedded with Fe nanoparticles, etc.However, many of these routes involved complex processes and high cost. The usage of metal catalystfor the vapor–liquid–solid (VLS) growth mechanism makes it difficult to remove the resident catalystafter the synthetic process. In this paper, it is reported that a simple and low cost synthetic route isdeveloped for the preparation of SiC nanowires by microwave heating technique without any catalyst.The prepared nanowires have core-shell structure with the diameters between 20 to 100nm. Thegrowth of these SiC nanowires is considered to involve a VLS process
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/18/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.561-565.1413.pdf
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