ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The high density of interface states of thermally grown oxides on silicon carbide hasprompted research into alternative oxidation methods and post oxidation anneals. One suchalternative is oxidation of a deposited sacrificial silicon layer. A recent variation of this technique isa partial oxidation of the deposited Si layer, so that a thin Si layer remains between the SiO2 andSiC layers. If the SiO2/Si interface has lower interface state densities than the SiO2/SiC interface,the SiO2/Si/SiC hetero-structure could yield improved channel mobilities in MOS devices.Moreover, by correct optimization of the MOSFET device structure, breakdown can be designed tooccur in the bulk SiC layer, thus maintaining a high blocking voltage. Post oxidation annealing inN2O is another technique often used to reduce interface state densities. However, little is knownabout the chemical and physical nature of these N2O oxidized dielectrics. Ellipsometric andMedium Energy Ion Scattering (MEIS) investigations of conventional SiO2/SiC interfacescompared with SiO2/Si/SiC hetero-junction structures and N2O oxidized samples are reported
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.509.pdf
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