Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
65 (1989), S. 386-387
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The temperature dependence of the etch rate of silicon nitride by atomic fluorine has been measured using a discharge-flow reactor. The activation energy of this process is 3.55±0.28 kcal/mol, quite similar to activation energies of Si and SiO2 etching, which were also measured (3.02±0.31 and 3.36±0.40 kcal/mol, respectively).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.342555
Permalink
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |