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  • 1
    Electronic Resource
    Electronic Resource
    Hot carrier induced picosecond dynamics of a vertical cavity surface emitting laser: Influence of transverse effects (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 569-571 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interplay of carrier heating effects and transverse variations of the carrier distribution functions has a significant influence on the ultrafast emission dynamics of semiconductor vertical cavity surface emitting lasers. This interplay can lead to dynamic overshooting and oscillations (here at 200 GHz) even for lasing on a single transverse and single longitudinal mode. A simple equivalent model is a cavity containing the gain medium and a saturable absorber. The numerical results can directly be compared with recently published experiments. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121858
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