ISSN:
1432-0630
Keywords:
PACS: 78.55. Cr; 61.80. Lj
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. PhotoLuminescence (PL) measurements are used to investigate the effects of a H2 plasma treatment in heavily doped p-type InP: Zn. Beside the large decrease in free hole concentration in the hydrogenated samples, a new Broad Luminescence Band (BLB) centered at about 1.32 eV appears upon laser irradiation during PL experiments above 50 K, and saturates for large values of the light intensities. It is inferred that the plasma treatment produces some kind of non-radiative defects which can then rearrange into new BLB centers under illumination provided it is applied above a threshold temperature (50 K). This mechanism is interpreted in terms of Recombination-Enhanced Defect Reaction (REDR) involving the two kinds of photogenerated carriers and appears to be low thermally assisted. The BLB is associated with the radiative emission at a phosphorus vacancy (Vp) close to a Zn acceptor (V+ pZn- In). It is believed that the formation of BLB centers originates from VP-related defects initially present in the freshly plasma-treated InP sample. The mechanisms involved in the Light-Induced Creation (LIC) of BLB centers are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390050180
Permalink