ISSN:
1090-6533
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract A new system for a photoelectric converter is proposed, and its photoelectric properties are studied, using an n-CdO/a-C/p-Si heterostructure as an example. The distinguishing feature of the structure is that the broad-band insulating layer of SiO2 on the surface of the silicon is replaced by a narrow-band layer of amorphous carbon, while a layer of CdO is used as the upper electrode. It is shown that an increase of the short-circuit current because of impact ionization can be expected in such a heterostructure. The results of the paper show that it is worthwhile to use CdO films in practice as transparent electrodes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1261894
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